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HEMT-based S-band low-noise amplifier

A low-noise amplifier and amplifier circuit technology, which is applied to high-frequency amplifiers, improved amplifiers to reduce noise effects, and amplifier input/output impedance improvements. It can solve problems such as insufficient stability, high noise figure, and low gain, and achieve Good stability, noise reduction, good matching effect

Active Publication Date: 2022-05-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Application Information

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Problems solved by technology

The existing S-band low noise amplifiers have problems such as high noise figure, low gain, and insufficient stability

Method used

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  • HEMT-based S-band low-noise amplifier
  • HEMT-based S-band low-noise amplifier
  • HEMT-based S-band low-noise amplifier

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Embodiment Construction

[0023] The technical solutions proposed by the present invention will be described in further detail below with reference to the accompanying drawings.

[0024] A HEMT-based S-band low-noise amplifier, the circuit structure is as follows figure 1 As shown, it includes an input matching circuit, a first-stage transistor amplifier circuit, a first-stage gate bias circuit, a first-stage drain bias circuit, a first-stage regulated power supply, an inter-stage matching circuit, and a second-stage transistor amplifier A circuit, a second-stage gate bias circuit, a second-stage drain bias circuit, a second-stage regulated power supply, and an output-stage matching circuit.

[0025] One end of the input matching circuit is connected to the input end of the radio frequency signal, the input matching circuit, the first-stage gate bias circuit and the first-stage transistor amplifier circuit are connected in sequence, and the first-stage transistor amplifier circuit and the first-stage d...

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Abstract

The invention discloses an HEMT (High Electron Mobility Transistor)-based S-band low noise amplifier, and relates to the technical field of microwave radio frequency circuits. Two-stage HEMT circuit amplification is adopted, resistance voltage division is adopted by two-stage bias circuits, choke inductors and bypass capacitors are introduced into the two-stage bias circuits, radio-frequency signals can be prevented from entering a direct-current path, better anti-interference performance is achieved, a stabilizing circuit with two-stage HEMT grid electrodes is added, the stability coefficient Stable of the whole amplifier circuit is far larger than 1, and the stability coefficient Stable of the whole amplifier circuit is far larger than 1. The stability of the circuit is better, the input matching part follows the minimum noise coefficient matching principle, and the output part follows the maximum transmission power matching principle for matching, so that the gain Gaingt of the whole two-stage low-noise amplifier circuit is realized; 28 dB, so that the noise coefficient is NFlt; 1.5, the standing-wave ratio VSWR < 1t > of the input voltage; 2.0, the standing wave ratio VSWR2lt of the output voltage; and 2.0, the gain of the signal is relatively large, the interference is relatively small, the gain flatness stability is good, and the matching performance is good.

Description

technical field [0001] The invention relates to the technical field of microwave radio frequency circuits, in particular to an S-band low-noise amplifier based on HEMT. Background technique [0002] With the continuous development of wireless communication technology, microwave and radio frequency circuits have been widely used. The low noise amplifier is an important part of the radio frequency receiver. It is located at the front end of the receiver. Its main function is to amplify the signal received by the antenna and introduce less noise. The main performance indicators of the low noise amplifier are: low noise figure, Appropriate gain, matching of input and output impedance, high stability coefficient, etc. [0003] S-band is a low-frequency band of electromagnetic waves, with a frequency range of about 2-4GHz, and is widely used in wireless communication systems such as satellite positioning, radar, Bluetooth, and wireless local area networks. High electron mobility...

Claims

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Application Information

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IPC IPC(8): H03F1/26H03F1/30H03F1/56H03F3/19
CPCH03F1/26H03F1/30H03F1/56H03F3/19Y02D30/70
Inventor 王丽任茂仁蒋豪罗攀达
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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