Semiconductor structure and manufacturing method of semiconductor structure

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure comprises a substrate; the gate structure is located on the substrate and comprises a first conductive layer, a barrier layer and a second conductive layer which are stacked in sequence; wherein the first conductive layer comprises a first polycrystalline silicon layer, a first metal layer and a second polycrystalline silicon layer, the first polycrystalline silicon layer is close to the substrate, and the second polycrystalline silicon layer is tightly attached to the barrier layer; the first metal layer is located between the first polycrystalline silicon layer and the second polycrystalline silicon layer. The gate structure provided by the embodiment of the invention has a vertical morphology and relatively strong electrical performance.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a semiconductor structure and a method for manufacturing the semiconductor structure. Background technique [0002] The field effect transistor in the semiconductor structure acts as a variable current switch that can control the output current based on the input voltage. A field effect transistor includes three terminals: gate, drain and source. Under the action of an electric field, the gate can form or eliminate the channel between the source and drain, allowing or hindering the flow of electrons. [0003] At present, most field effect transistors use polysilicon materials and other conductive materials to form gate structures. The use of polysilicon to form the gate structure mainly has the following advantages: the interface between polysilicon and the gate dielectric layer has fewer defects; the work function of polysilicon is easy to adjust, and t...

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Problems solved by technology

[0004] However, during the formation of the gate structure of polysilicon material, due to the characteristics of polysilicon material and the limitation of etching process, the side of polysilicon will be easily over-etched during the etching process, which will affect the electrical performance of the gate structure. Reduced yield of semiconductor structures

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