Titanium dioxide rutile phase crystal face heterojunction gas sensor and preparation method thereof
A gas-sensing sensor, rutile phase technology, applied in the field of sensors, can solve the problems of low long-term working stability of the gas-sensing sensor, the sensitivity needs to be further improved, etc., and achieves the effects of low cost and simple process
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0049] The present invention provides a method for preparing a titanium dioxide rutile phase crystal plane heterojunction gas sensor according to the above technical solution, comprising the following steps:
[0050] A crystal plane heterojunction film is prepared on one side of a conductive substrate to obtain a crystal plane heterojunction film substrate; wherein, the crystal plane heterojunction film is made of TiO 2 The rutile phase crystal plane heterojunction material is formed, the TiO 2 Rutile-phase crystal-plane heterojunction materials include TiO 2 Rutile phase nanopillars and grown on the TiO 2 TiO on the surface of rutile-phase nanopillars 2 Rutile phase nanosheets;
[0051] Electrodes are prepared on the surface of the crystal plane heterojunction thin film of the crystal plane heterojunction thin film substrate to obtain a titanium dioxide rutile phase crystal plane heterojunction gas sensor.
[0052] The invention prepares a crystal plane heterojunction thi...
Embodiment 1
[0073] The FTO substrate is ultrasonically cleaned with acetone, ethanol and deionized water in turn, and the cleaned FTO substrate is dried in a drying oven for use;
[0074] Mix 28 mL of deionized water, 2 mL of ethanol (analytical purity, purity ≥99.7%), 30 mL of hydrochloric acid (analytical purity, mass fraction of 36-38%) and 1 mL of tetrabutyl titanate (purity ≥99.0%) to obtain the first precursor solution;
[0075] The first precursor solution is poured into a polytetrafluoroethylene-lined hydrothermal reactor, and the conductive surface of the FTO substrate is leaned against the wall of the reactor liner containing the first precursor solution, and Ensure that the FTO substrate is immersed in the first precursor solution, cover the reaction kettle tightly, place it in a constant temperature oven, and perform a hydrothermal reaction at 150 °C for 8 hours; after the reaction, cool down to room temperature (25 °C), and remove the Take out from a constant temperature ove...
Embodiment 2
[0080] TiO was prepared according to the method of Example 1 2 The difference of the rutile phase crystal plane heterojunction gas sensor is that when preparing the second precursor solution, the amount of titanium trichloride solution is 1 mL; the prepared crystal plane heterojunction gas sensor is recorded as FT1-TiO 2 sensor.
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
| length | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More