Preparation method and application of high-purity cadmium antimonide

A cadmium antimonide, high-purity technology, applied in chemical instruments and methods, antimony compounds, inorganic chemistry, etc., can solve the problems that CdSb cannot approach the stoichiometric ratio, the influence of device performance, and the purity is not high, so as to reduce the residual antimony element, The effect of reducing the content of free cadmium and the simple and efficient preparation method

Pending Publication Date: 2022-06-07
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the purity of cadmium antimonide currently synthesized is often not high, and the material contains unreacted antimony and cadmium simple substances, and the prepared CdSb cannot approach the stoichiometric ratio, which affects the performance of the device.

Method used

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  • Preparation method and application of high-purity cadmium antimonide
  • Preparation method and application of high-purity cadmium antimonide

Examples

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Embodiment 1

[0029] As an embodiment of the method of preparing high-purity cadmium antimonide of the present invention, comprising the following embodiment steps: (1) the cadmium particles and antimony masseurage 1.1: 1 ingredients into the graphite boat, wherein the antimony block is placed in the lower layer, cadmium particles in the upper layer; (2) the above materials are loaded into a horizontal tubular heating furnace, into an inert gas, the gas flow rate is 10L / min; After the inert gas is passed in for 30min, heating begins, the first insulation stage is heated from room temperature to 8 °C / min to 420 °C insulation for 50min, the second insulation stage is then heated to 10 °C / min, heated to 600 °C for 2h, and then the third insulation stage is heated at 10 °C / min to 680 °C for 4h, and cooled with the furnace to obtain high-purity cadmium antimonide.

Embodiment 2

[0031]As an embodiment of a method for preparing high-purity cadmium antimonide of the present invention, comprising the following embodiment steps: (1) the cadmium particles and antimony block massage Erbi 1.2: 1 ingredients into a graphite boat, wherein the antimony block is placed in the lower layer, cadmium particles in the upper layer; (2) the above material is loaded into a horizontal tubular heating furnace, into an inert gas, the gas flow rate is 8L / min; After the inert gas is introduced for 30min, heating begins, the first insulation stage is heated from room temperature to 10 °C / min to 350 °C, insulation is 30min, the second insulation stage is then heated to 5 °C / min, heated to 500 °C insulation for 1h, and then the third insulation stage is heated at 5 °C / min to 650 °C for 5h, and cooled down with the furnace to obtain high-purity cadmium antimonide.

Embodiment 3

[0033] As an embodiment of the method of preparing high-purity cadmium antimonide of the present invention, specifically comprising the following embodiment steps: (1) the cadmium particles and antimony block massage Erbi 1.15: 1 ingredients into the graphite boat, wherein the antimony block is placed in the lower layer, the cadmium particles in the upper layer; (2) the above material is loaded into a horizontal tubular heating furnace, into an inert gas, the gas flow rate is 3L / min, after the inert gas is passed in for 30min, start heating, the first thermal insulation stage from room temperature to 5 ° C / min heating to 380 ° C, heat preservation 60min, The second insulation stage is then heated to 560 °C for 3h at 8 °C / min, and then the third insulation stage is heated to 8 °C / min to 700 °C for 3h, and cooled down with the furnace to obtain high-purity cadmium antimonide.

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Abstract

The invention provides a preparation method and application of high-purity cadmium antimonide, and belongs to the field of material preparation. The preparation method comprises the following steps: (1) placing an antimony source and a cadmium source in a reaction container; the molar ratio of the antimony source to the cadmium source is 1: (1.1-1.5); and (2) placing the reaction container in the step (1) in an inert atmosphere for programmed sintering treatment, and cooling along with a furnace to obtain the high-purity cadmium antimonide. According to the method, the difference of saturated vapor pressure after cadmium and antimony elementary substances are molten is ingeniously utilized, calcination in three heat preservation stages of cadmium melting, cadmium antimonide melting and antimony melting is adopted, it is guaranteed that cadmium can completely react with antimony, meanwhile, the content of free cadmium in the product is reduced, and high-purity cadmium antimonide close to the stoichiometric ratio is prepared.

Description

Technical field [0001] The present invention belongs to the field of material preparation, specifically relates to a high purity cadmium antimonide preparation method and application. Background [0002] Cadmium antimonide has the molecular formula CdSb and molecular weight of 234.16 and can be used to make solar cells, infrared modulators, infrared window field luminescent devices, photocells, infrared detection, X-ray detection, nuclear radioactivity detectors and light-emitting devices near the visible light region. However, the current synthesis of cadmium antimonide is often not high purity, the material contains unreacted complete antimony and cadmium elemental, the prepared CdSb can not be close to the stoichiometric ratio, resulting in the performance of the device is affected. Therefore, it is urgent to prepare high-purity cadmium antimonide by a simple process and efficient preparation of high-purity cadmium antimonide to meet the requirements of photocells, photodetect...

Claims

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Application Information

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IPC IPC(8): C01G30/00
CPCC01G30/00C01P2006/80Y02P70/50
Inventor 文崇斌周荣艳朱刘童培云
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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