Silicon-based heterojunction solar cell structure and preparation method thereof

Abstract

The invention discloses a silicon-based heterojunction solar cell structure, which belongs to the field of solar cell structures and comprises an N-type monocrystalline silicon wafer, an N-type amorphous silicon layer positioned on the upper surface of the N-type monocrystalline silicon wafer and a P-type amorphous silicon layer positioned on the lower surface of the N-type monocrystalline silicon wafer, an upper electrode is arranged above the N-type amorphous silicon layer, and a lower electrode is arranged below the P-type amorphous silicon layer. One or more nitride thin film layers are arranged between the upper electrode and the N-type amorphous silicon layer, the nitride thin film layers are deposited on the upper surface of the N-type amorphous silicon layer, and a TCO transparent conductive thin film layer is arranged between the P-type amorphous silicon layer and the lower electrode. The invention further discloses a preparation method of the silicon-based heterojunction solar cell structure. The solar cell structure has the advantage that the short-circuit current of the solar cell structure can be improved.

Description

【Technical field】 [0001] The invention relates to a silicon-based heterojunction solar cell structure and a preparation method, and belongs to the field of solar cell structures. 【Background technique】 [0002] At present, heterojunction solar cells have not been able to achieve large-scale commercial applications due to factors such as high fabrication costs and narrow process technology windows. The conventional heterojunction cell structure has some structural defects, which affect the efficiency improvement of the heterojunction. For example, in the common HIT cell structure, the usual structure is to set an amorphous silicon layer on the upper surface of a single crystal silicon wafer. , a transparent TCO thin film layer is arranged on the amorphous silicon layer, but because the transparent TCO thin film layer itself has a certain light transmittance, this leads to the existence of a large parasitic absorption of the intrinsic amorphous silicon layer and the doped amor...

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Problems solved by technology

There are some structural defects in the conventional heterojunction cell structure, which affect the efficiency improvement of the heterojunction. For example, in the common HIT cell structure, the usual structure is to set an amorphous silicon layer on the upper surface of the single crystal silicon wafer , set a transparent TCO thin film layer on the amorphous silicon layer, but because the transparent TCO thin film layer itself has a certain light transmittance, this leads to a large parasitic absorption in the underlying intrinsic amorphous silicon layer and doped amorphous silicon layer and series resistance greatly affect the short-circuit current and fill factor of heterojunction cells

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