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High-efficiency heat-dissipation deep-etching double-channel ridge-shaped quantum cascade laser and manufacturing method thereof

A technology of quantum cascade and manufacturing method, applied in the directions of lasers, phonon exciters, laser parts, etc., can solve the problems of increased strain in the active region, current limitation on both sides of the ridge, and decreased optical field confinement ability, etc. The effect of reducing strain, improving device heat dissipation, improving device life and working stability

Pending Publication Date: 2022-06-24
HAINAN NORMAL UNIV
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Problems solved by technology

[0005] In addition, the etching depth of the traditional ridge waveguide structure is often only etched to the active area. Experiments show that such an etching depth leads to current confinement on both sides of the ridge, a decrease in the optical field confinement capability, and an increase in the strain in the active area, which is not conducive to device stability. Work

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  • High-efficiency heat-dissipation deep-etching double-channel ridge-shaped quantum cascade laser and manufacturing method thereof
  • High-efficiency heat-dissipation deep-etching double-channel ridge-shaped quantum cascade laser and manufacturing method thereof
  • High-efficiency heat-dissipation deep-etching double-channel ridge-shaped quantum cascade laser and manufacturing method thereof

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Embodiment Construction

[0036] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0037] like figure 1 , figure 2 and image 3 , the embodiment of the present invention discloses a method for manufacturing a high-efficiency heat-dissipating deep-etched double-channel ridge-shaped quantum cascade laser, the steps comprising:

[0038] (a)-(b) growing the lower cladding layer 2, the active region 3 and the upper cladding layer 4 on the InP substrate 1;

[0039] Among them, after the lower cladding layer 2 is grown...

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Abstract

The invention discloses an efficient heat dissipation deep etching double-channel ridge-shaped quantum cascade laser and a manufacturing method. The method comprises the following steps: growing a lower cladding, an active region and an upper cladding on an InP substrate; depositing a layer of hard mask, defining a laser waveguide image through thin photoresist and UV photoetching, and transferring the waveguide image to the SiO2 hard mask layer through reactive ion etching; removing the photoresist and sequentially etching the upper cladding layer, the active region and the lower cladding layer; ohmic contact is deposited on the upper cladding to serve as a laser top contact electrode, and ohmic contact is deposited at the bottom of the substrate to serve as a laser bottom contact electrode. The laser comprises an InP substrate, a lower cladding, an active region and an upper cladding, the upper cladding layer, the active region and the lower cladding layer are etched into the same shape as a laser waveguide image; the deep etching method is adopted to extend the etching depth of the ridge waveguide to the lower cladding and the substrate below the active area, the heat dissipation performance of the device can be improved, meanwhile, the strain of the active area can be reduced, the service life of the device is prolonged, and the working stability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of quantum cascade, in particular to a high-efficiency heat dissipation and deep-etching double-channel ridge-shaped quantum cascade laser and a manufacturing method. Background technique [0002] The mid- and far-infrared band (3-30μm) includes two low-absorbing atmospheric windows (3-5μm and 8-14μm). The Mie scattering effect in this wavelength range is relatively weak, and the single-shot light in this band is not relayed. The transmission distance can exceed 10km. In addition, the fundamental frequency vibration and vibration-rotation energy of a large number of molecules correspond to the photon energy in the mid- and far-infrared bands, and most substances have "fingerprint" absorption peaks in the mid- and far-infrared bands. Therefore, mid- and far-infrared laser light sources have important application requirements in direct infrared countermeasures, trace gas detection, and free space communicatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34H01S5/30H01S5/22H01S5/024H01S5/02
CPCH01S5/3401H01S5/309H01S5/2202H01S5/02469H01S5/02476H01S5/0206
Inventor 曲轶马雪欢李再金赵志斌陈浩乔忠良李林刘国军
Owner HAINAN NORMAL UNIV
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