Semiconductor memory structure and manufacturing method thereof

Abstract

The invention relates to a semiconductor memory structure and a manufacturing method thereof. The semiconductor structure comprises a semiconductor substrate, and the semiconductor substrate comprises an active region; the dielectric layer is positioned on the active region; the contact hole is located in the dielectric layer, and a part of the active region is exposed out of the contact hole; the contact hole is filled with a conducting medium; and the conducting medium is selective epitaxial growth silicon. The manufacturing method comprises the following steps: providing a semiconductor substrate, and forming an active region in the semiconductor substrate; forming a dielectric layer above the semiconductor substrate, and forming a contact hole exposing a part of the active region in the dielectric layer; and selectively and epitaxially growing a silicon layer in the contact hole. Selective epitaxial growth (SEG) silicon is adopted, and almost no hole exists, so that the resistance is smaller, and the electrical characteristic is more excellent.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to a semiconductor memory structure and a manufacturing method thereof. Background technique [0002] In a semiconductor manufacturing process, an etching process is used to form a contact hole in a dielectric layer, and then a conductive material is deposited in the contact hole for electrical connection between semiconductor devices, which is a widely used process. The contact holes can be directly electrically connected to the gate, source and drain of the device, and can also be used for electrical connection between layers. Wire connections in many semiconductor devices are critical, and the technical application of connecting wires is becoming increasingly difficult. [0003] Take DRAM as an example, such as figure 1 As shown, most of the wires buried in the contact holes in the active area unit 101 connected to the capacitor are made of polysilicon 102. With the develo...

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Problems solved by technology

[0007] However, repeated deposition and etching by the above method can neither completely eliminate the holes, nor is it difficult to achieve industrialized mass production due to the complicated process.

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