Epitaxial structure of semiconductor device, preparation method of epitaxial structure and semiconductor device

Abstract

The embodiment of the invention discloses an epitaxial structure of a semiconductor device, a preparation method of the epitaxial structure and the semiconductor device. The epitaxial structure comprises a substrate and a semiconductor layer located on one side of the substrate. The semiconductor layer at least comprises a buffer layer and a barrier layer which are stacked on one side of the substrate; the forbidden bandwidth of the barrier layer is larger than that of the buffer layer, ions are at least injected into the buffer layer and the barrier layer, and the injection concentration of the ions in the barrier layer is smaller than that of the ions in the buffer layer. The semiconductor device using the epitaxial structure can ensure the electron mobility while reducing electric leakage.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular, to an epitaxial structure of a semiconductor device, a preparation method thereof, and a semiconductor device. Background technique [0002] The semiconductor material gallium nitride has become a research hotspot in the semiconductor field due to its large band gap, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. For example, it is used to fabricate gallium nitride high electron mobility transistors. (GaN HEMT) devices. [0003] Since gallium nitride crystals usually contain N-type impurities, the resistivity of the buffer layer is low, and the leakage of semiconductor devices cannot be effectively controlled. To solve this problem, there are two main implementation methods in the prior art: one method is to neutralize N-type impurities by doping impurities during epitaxial growth, but this me...

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Problems solved by technology

The second method is to perform ion implantation in the buffer layer to form a high-resistivity region. This method can alleviate the drain hysteresis effect, but when the concentration of implanted ions is insufficient, the resistivity will decrease, and when the concentration of implanted ions is high, it will It leads to the decrease of electron mobility in the two-dimensional electron gas, which in turn affects the performance of the device

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