Method for improving power generation efficiency of mass-production cadmium telluride thin film battery
A thin-film battery and power generation efficiency technology, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems that the photoresist cannot be filled, and the holes in the cadmium telluride film do not have corrosion function, so as to reduce the cost of electricity and improve the conversion Effect of improving efficiency and power generation efficiency
Pending Publication Date: 2022-07-08
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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Problems solved by technology
[0005]
In view of this, the purpose of the present invention is to provide a method for improving the power generation efficiency of cadmium telluride thin film cells produced in large quantities, specifically by solving the problems that the current photoresist cannot fill the holes of cadmium telluride thin film and does not have corrosion function, So as to improve the conversion efficiency of cadmium telluride thin film battery and accelerate the industrialization process of cadmium telluride thin film battery
Method used
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Embodiment 1
[0022] Example 1: Modified gelatin (C 124 H 173 O 39 N 31 ) 15%, sensitizer (ferric ammonium citrate) 2.5%, cross-linking agent (methylenebisacrylamide) 1%, water 81.5%
Embodiment 2
[0023] Example 2: Modified gelatin (C 124 H 173 O 39 N 31 ) 20%, sensitizer (ferric ammonium citrate) 3%, cross-linking agent (methylenebisacrylamide) 3%, water 74%
Embodiment 3
[0024] Example 3: Modified gelatin (C 124 H 173 O 39 N 31 ) 15%, sensitizer (ferric ammonium citrate) 1%, cross-linking agent (methylenebisacrylamide) 1%, water 83%
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The invention discloses a method for improving the power generation efficiency of a mass-produced cadmium telluride thin film battery, which is realized by providing a photoresist applied to a mass-produced production process of the cadmium telluride thin film battery, the light sensitivity of the photoresist is higher than that of the existing photoresist, and the curing reaction wavelength of the photoresist is 360 nm. The photoresist comprises modified gelatin, a photosensitizer, a cross-linking agent and water, the molecular formula of the modified gelatin is C124H173O39N31, and the modification method comprises the step of introducing a low-molecular compound or a high-molecular compound in the gelatin extraction and synthesis process. According to the invention, the problems that the current photoresist cannot fill the holes of the cadmium telluride thin film and does not have a corrosion function are solved, so that the conversion efficiency of the cadmium telluride thin film battery is improved, and the industrialization process of the cadmium telluride thin film battery is accelerated.
Description
technical field [0001] The invention relates to a method for improving the power generation efficiency of a mass-produced cadmium telluride thin film battery, belonging to the technical field of cadmium telluride thin film battery production. Background technique [0002] Thin film battery, as the name suggests, is to prepare a layer of thin film into a solar cell. It uses very little silicon, which makes it easier to reduce costs. At the same time, it is not only a high-efficiency energy product, but also a new type of building material. It is easier to perfectly combine with buildings. In the context of the continuous shortage of silicon raw materials in the international market, thin-film solar cells have become a new trend and new hot spot in the development of the international photovoltaic market. [0003] Although thin-film batteries have the advantages of low cost, good low-light performance, and are suitable for integration with buildings, they also have shortcoming...
Claims
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Login to View More IPC IPC(8): H01L31/18G03F7/004G03F7/027
CPCH01L31/1828G03F7/027G03F7/004Y02P70/50
Inventor 青汉森彭寿潘锦功傅干华蒋猛东冬冬
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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