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III-group nitride epitaxial structure and preparation method thereof

An epitaxial structure and nitride technology, applied in the field of electronics, can solve the problems of high dislocation defect density and the influence of the life of the carrier plate, and achieve the effect of improving crystal quality, improving crystal quality, and improving the ability to fill dislocation defects.

Active Publication Date: 2022-07-08
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, the object of the present invention is to provide a III-nitride epitaxial structure and a preparation method thereof, so as to fundamentally solve the problems caused by the high dislocation defect density or the use of 2D layered growth in the existing III-nitride material epitaxial growth process. High temperature and long time are required to cause problems that affect the life of the carrier plate

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  • III-group nitride epitaxial structure and preparation method thereof
  • III-group nitride epitaxial structure and preparation method thereof

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Embodiment 1

[0031] see figure 1 , is a schematic structural diagram of a group III nitride epitaxial structure provided by an embodiment of the present invention. For convenience of description, only the part related to the embodiment of the present invention is shown. The group III nitride epitaxial structure provided by the embodiment of the present invention includes: : the substrate 1, and the buffer layer 2, the dislocation filter layer 3 and the III-nitride functional layer 4 stacked in sequence on the substrate 1; the dislocation filter layer 3 includes a first sublayer 31 and a second sublayer 3 stacked in sequence Layer 32, the first sublayer 31 is an In-doped Group III nitride layer, and the second sublayer 32 is a Mg-doped Group III nitride layer.

[0032] Wherein, in one embodiment of the present invention, the substrate 1 includes, but is not limited to, a sapphire substrate, a silicon substrate, a silicon carbide substrate, an aluminum nitride substrate, a gallium nitride su...

Embodiment 2

[0062] see figure 2 , shows a method for preparing a III-nitride epitaxial structure in the second embodiment of the present invention, and the method specifically includes steps S11 to S14 .

[0063] Step S11, providing a substrate.

[0064] Wherein, in the embodiments of the present invention, the selected substrates include but are not limited to sapphire substrates, silicon substrates, silicon carbide substrates, aluminum nitride substrates, gallium nitride substrates, and substrates such as silicon dioxide and sapphire. The composite substrate composed of, specifically, in this embodiment, sapphire is used as the epitaxial layer growth substrate, which can make a periodically changing structure on the substrate to form a patterned substrate, or SiO can be used 2 ~Al 2 O 3 and other composite patterned substrates. Specifically, in the embodiment of the present invention, a sapphire patterned substrate is used as the epitaxial layer growth substrate.

[0065] Further,...

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Abstract

The invention provides a group III nitride epitaxial structure and a preparation method thereof. The group III nitride epitaxial structure comprises a substrate, and a buffer layer, a dislocation filtering layer and a group III nitride functional layer which are sequentially stacked on the substrate, the dislocation filtering layer comprises a first sub-layer and a second sub-layer which are stacked in sequence, the first sub-layer is an In-doped III-group nitride layer, and the second sub-layer is an Mg-doped III-group nitride layer. The dislocation filter layer composed of the first sub-layer and the second sub-layer can effectively block dislocation extension from bottom to top, effectively improve the crystal quality of epitaxial growth, provide a bottom layer with good crystal quality for subsequent epitaxial growth, greatly improve the overall crystal quality of the III-nitride epitaxial structure, and improve the yield of the III-nitride epitaxial structure. The problem that the dislocation defect density is large in the epitaxial growth process of an existing III-group nitride material or the service life of a carrying disc is affected due to the fact that high temperature and long time are needed for 2D layered growth is solved.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a group III nitride epitaxial structure and a preparation method thereof. Background technique [0002] Group III nitride materials have broad application prospects in many fields. For example, blue light-emitting diodes (LEDs) made of indium gallium nitride-based materials can achieve high-efficiency, high-reliability solid-state lighting, and have rapidly achieved industrialization. High Electron Mobility Transistors (HEMTs) fabricated from AlGaN-based materials, which can operate at extremely high frequencies, have also received extensive attention from researchers. At present, the vast majority of III-nitride materials are realized by epitaxial growth on a heterogeneous substrate. Commonly used heterogeneous substrates include sapphire substrates, silicon carbide substrates and silicon substrates. In order to overcome the problem of heteroepitaxial lattice mismatch, a bu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/025H01L33/007Y02P70/50
Inventor 陈万军谢志文张铭信陈铭胜
Owner JIANGXI ZHAO CHI SEMICON CO LTD