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Gallium oxide field effect transistor device and preparation method thereof

A gallium oxide field and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low breakdown voltage and low conduction characteristics of field effect transistors

Pending Publication Date: 2022-07-12
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, currently reported Ga 2 o 3 The breakdown voltage and conduction characteristics of field effect transistor (FET) devices are still far below the expected value of the material

Method used

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  • Gallium oxide field effect transistor device and preparation method thereof
  • Gallium oxide field effect transistor device and preparation method thereof
  • Gallium oxide field effect transistor device and preparation method thereof

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Embodiment Construction

[0039] In order to enable those skilled in the art to better understand the solution, the technical solutions in the embodiments of the solution will be clearly described below with reference to the drawings in the embodiments of the solution. Obviously, the described embodiments are part of the solution. examples, but not all examples. Based on the embodiments in this solution, all other embodiments obtained by persons of ordinary skill in the art without creative work shall fall within the protection scope of this solution.

[0040]The term "including" and any other modifications in the description and claims of this solution and the above drawings means "including but not limited to", and is intended to cover non-exclusive inclusion, and is not limited to the examples listed in the text. Also, the terms "first" and "second" and the like are used to distinguish different objects, rather than to describe a particular order.

[0041] The implementation of the present inventio...

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Abstract

The invention provides a gallium oxide field effect transistor device and a preparation method thereof. The device comprises a substrate, an n-type gallium oxide channel layer arranged on the substrate, a drain electrode and a source electrode which are arranged on the n-type gallium oxide channel layer, a gate dielectric layer arranged between the drain electrode and the source electrode, and a gate electrode arranged on the gate dielectric layer, the part, corresponding to the part between the drain electrode and the source electrode, of the n-type gallium oxide channel layer comprises a first channel and at least one fin-type channel; the fin-type channel is arranged between the drain electrode and the first channel; the cross section of the fin-type channel is a trapezoid pointing to the direction of the source electrode; the vertical projection of the gate electrode on the n-type gallium oxide channel layer covers a connecting region of the fin-type channel and the first channel; and P-type oxide dielectric layers are filled between the n-type gallium oxide channel layer and the gate dielectric layer and at the two sides of the fin-type channel. According to the invention, the size of the fin-type channel is reduced, and the P-type medium exhausts the carriers of the channel, so that the peak electric field is reduced, and the breakdown voltage of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a gallium oxide field effect transistor device and a preparation method thereof. Background technique [0002] Power electronic devices are mainly used for power changes and circuit control of power equipment, and are the core devices for power (power) processing. At present, environmental resource problems are facing severe challenges around the world. Countries have successively promulgated energy conservation and emission reduction policies. As the core device for power control and conversion of industrial facilities, household appliances and other equipment, the power semiconductor industry will face new technical challenges and development opportunities. [0003] Silicon-based semiconductor devices are the most commonly used power devices in power systems at present, and their performance has been quite perfect and is close to the theoretical limit determ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/423H01L29/10H01L29/06H01L21/336
CPCH01L29/1037H01L29/42356H01L29/42364H01L29/0611H01L29/66522H01L29/78
Inventor 刘宏宇吕元杰王元刚卜爱民马春雷冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP