Double-sided perovskite solar cell and preparation method thereof
A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of large differences in uniformity and low photoelectric conversion efficiency
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[0050] The invention provides a preparation method of a double-sided perovskite solar cell, comprising the following steps:
[0051] a) Sputter deposition of indium tin oxide on both sides of the glass to form a double-sided conductive substrate;
[0052] b) depositing a first charge transport layer by sputtering on both sides of the double-sided conductive substrate;
[0053] c) Decrease the composite layer group obtained in step b) first at a rate of 14-16 mm / s, then at a rate of 7-9 mm / s, and finally immerse it into the perovskite precursor solution at a rate of 3-5 mm / s , for soaking;
[0054] d) lifting the soaked composite layer group from the perovskite precursor solution by means of plane lifting, and performing annealing to form a perovskite active layer on both sides of the composite layer group;
[0055] The lifting process includes: first rising at a rate of 1-3 mm / s, then rising at a rate of 7-9 mm / s, and finally rising at a rate of 14-16 mm / s;
[0056] e) anneal...
Embodiment 1
[0155] Fabrication of bifacial perovskite solar cells:
[0156] 1) The vertical magnetron sputtering method was used to simultaneously sputter and deposit ITO on both sides of the 2.2mm thick glass to form a double-sided conductive substrate;
[0157] Parameters for sputter deposition of indium tin oxide on both sides of glass include:
[0158] Background vacuum -4 Pa, the target base distance is 30cm, the sputtering power is 400W, Ar gas and O 2 The flow ratio is 35:1;
[0159] The thickness of the indium tin oxide deposition is 200nm;
[0160] The optical transmittance of the double-sided conductive substrate is 89%, and the resistance is 15Ω;
[0161] 2) Using a vertical magnetron sputtering method, sputtering and depositing TiO on both sides of the double-sided conductive substrate 2 Electron transport layer; parameters for sputter deposition include:
[0162] Background vacuum -4 Pa; target base distance is 50cm, sputtering power is 350W, Ar gas and O 2 The flow ratio...
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