Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light-absorbing layer, method for producing same, dispersion liquid, photoelectric conversion element, and solar cell

A light-absorbing layer and manufacturing method technology, which is applied in the field of solar cells, can solve the problems of reduced coverage of the light-absorbing layer and decreased quantum yield, and achieve excellent photoelectric conversion efficiency

Pending Publication Date: 2022-07-22
KAO CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the content of quantum dots in the light-absorbing layer is increased, more voids will be generated in the light-absorbing layer, or the coverage of the light-absorbing layer will be reduced, resulting in a decrease in quantum yield.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-absorbing layer, method for producing same, dispersion liquid, photoelectric conversion element, and solar cell
  • Light-absorbing layer, method for producing same, dispersion liquid, photoelectric conversion element, and solar cell
  • Light-absorbing layer, method for producing same, dispersion liquid, photoelectric conversion element, and solar cell

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0095] The preparation method of the above-mentioned dispersion liquid is not particularly limited, but the mixing temperature is preferably 0°C or higher, more preferably 10°C or higher, and still more preferably 0°C or higher from the viewpoints of ease of production, cost, storage stability of the dispersion, improvement in photoelectric conversion efficiency, and the like. 20°C or higher, preferably 50°C or lower, more preferably 40°C or lower, and still more preferably 30°C or lower. In addition, from the same viewpoint, the mixing time is preferably more than 0 hour, more preferably 0.1 hour or more, preferably 72 hours or less, more preferably 24 hours or less, and still more preferably 1 hour or less.

[0096] The above-mentioned dispersion liquid is preferably a dispersion liquid after filtration to remove coarse particles, and the filter pore size during filtration is preferably 0.1 μm or more from the viewpoints of ease of manufacture, cost, storage stability of the ...

Embodiment 1

[0205]

[0206] 0.20 g of the solid oleic acid-coordinated PbS quantum dots was dispersed in 2 mL of toluene (dehydrated, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) to obtain a black transparent dispersion. On the other hand, 3-aminopropionic acid hydroiodide (0.072 g, manufactured by Tokyo Chemical Industry Co., Ltd.) was dissolved in 0.5 mL of DMF (dehydrated, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) and toluene (dehydrated, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) Pure chemical Co., Ltd. product) 1 mL of amino acid salt solution (3-aminopropionic acid hydroiodide / oleic acid molar ratio = 2) was obtained. The above amino acid salt solution was added dropwise to the PbS quantum dots at a rate of 1 drop / 10 seconds (dropping time was 11 minutes) at room temperature (25°C), in a nitrogen atmosphere (in the glove box), without stirring. dispersion, and then left to stand for 18 hours. Further, 5 mL of methanol was ...

Embodiment 2

[0224] In Example 1, except that 4-aminobutyric acid hydriodate (0.077 g, manufactured by Tokyo Chemical Industry Co., Ltd.) was used instead of 3-aminopropionic acid hydriodate, it was carried out in the same manner as in Example 1 to form a light Absorber layer and make battery.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Band gap energyaaaaaaaaaa
Band gap energyaaaaaaaaaa
Bandgapaaaaaaaaaa
Login to View More

Abstract

Provided are: a light-absorbing layer for forming a photoelectric conversion element and a solar cell having excellent photoelectric conversion efficiency; a photoelectric conversion element having the light-absorbing layer; and a solar cell. Also provided is a method for producing a light-absorbing layer having few voids. The light absorption layer of the present invention contains a perovskite compound and quantum dots containing an aliphatic amino acid.

Description

technical field [0001] The present invention relates to a light absorbing layer and a method for producing the same, a dispersion liquid for producing the above light absorbing layer, a photoelectric conversion element having the above light absorbing layer, and a solar cell having the above photoelectric conversion element. Background technique [0002] Photoelectric conversion elements that convert light energy into electrical energy are used in solar cells, photosensors, copiers, and the like. In particular, from the viewpoint of environmental and energy issues, a photoelectric conversion element (solar cell) utilizing sunlight, which is an inexhaustible clean energy source, has been attracting attention. [0003] Since ordinary silicon solar cells use ultra-high-purity silicon and are manufactured in a "dry process" such as epitaxial crystal growth in a high vacuum, a significant cost reduction cannot be expected. Therefore, solar cells manufactured by a "wet process" s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/44
CPCH01G9/2009H01G9/2059H01G9/2031Y02E10/549H10K85/50H01G9/20H10K71/12B82Y30/00H10K85/30H10K30/10H10K50/115H10K85/60H10K2102/00
Inventor 尾込裕平
Owner KAO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products