Polyimide positive photoresist based on alkali deactivation mechanism

Abstract

The invention discloses a polyimide positive photoresist based on an alkali deactivation mechanism, which comprises the following components in percentage by weight: 10-50% of polyamide acid resin, 10-50% of alkaline catalyst, 10-50% of photo-acid generator and 10-50% of solvent, and the sum of the components is 100%. 0.5%-10% of a basic catalyst; 0.5%-10% of a photoacid generator; and 50%-90% of a solvent. The invention provides a polyimide positive photoresist based on an alkali deactivation mechanism, the photoresist belongs to a chemical amplification photoresist, the photosensitivity is strong, the exposure dose can be reduced to 50-70mj / cm < 2 > by taking the photoresist thickness of 3 microns as an example, meanwhile, the imidization photoresist thickness loss is smaller, the production efficiency of customers can be greatly improved, and the production cost is reduced.

Description

technical field [0001] The present invention relates to the technical field of photoresist, in particular to a polyimide positive photoresist based on an alkali deactivation mechanism. Background technique [0002] Integrated circuit (IC) packaging is an essential link in the integrated circuit industry chain. Packaging refers to the process of processing the tested wafer to obtain an independent chip, so that the circuit chip is protected from the surrounding environment, plays the role of protecting the chip, enhancing the thermal conductivity, and communicating the internal and external circuits of the chip. important part of the circuit. [0003] A key photosensitive insulating material needs to be used in the packaging, that is, photosensitive polyimide, which is divided into positive and negative. In the current process, the positive photosensitive polyimide photoresist generally uses polyamic acid and a photosensitive compound containing diazonaphthoquinone (DNQ) to...

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Problems solved by technology

However, the defects of this method are also obvious. First, the exposure dose required by DNQ is relatively large, usually 150mj / cm 2 The above reduces the production efficiency. Secondly, in the later stage of high-temperature imidization, due to the existence of DNQ and the high addition amount, it will cause a very high film thickness loss of more than 30%. At the same time, the temperature and time conditions required for imidization are also more Severe usually requires above 300°C

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