Plasma coating device and method based on ICP (inductively coupled plasma)

Abstract

The invention discloses an ICP (inductively coupled plasma)-based plasma coating device and a method thereof, which are used for coating a workpiece to be coated with a film by using chemical monomer gas under a vacuumizing condition. The ICP-based plasma coating device comprises: a coating chamber; the rotating stand is rotatably arranged in the coating chamber and is used for placing the workpiece to be coated; the gas supply and exhaust system is connected with the coating chamber in a conducting manner, and is used for exhausting gas outwards to form a vacuum degree in the coating chamber and supplying gas inwards to provide the chemical monomer gas for the coating chamber; the one or more ICP excitation systems are respectively and correspondingly arranged on the outer side of the coating chamber and are used for generating an excitation electromagnetic field in the coating chamber so as to ionize the chemical monomer gas to form inductively coupled plasmas; and the inductively coupled plasma is deposited on the surface of the workpiece to be coated to form a uniform film layer.

Description

technical field [0001] The invention relates to the technical field of plasma coating, in particular to an ICP-based plasma coating device and a method thereof. Background technique [0002] As an effective method to improve the surface properties of materials, plasma coating has been widely used in aerospace, automobile manufacturing, mechanical heavy industry and hardware tool manufacturing and other fields. Correspondingly, the plasma coating device, as an important processing equipment, has also been widely used in thin film deposition, etching and surface treatment processes. At present, existing plasma coating devices can be divided into capacitively coupled plasma devices and inductively coupled plasma devices due to differences in inductive coupling elements. [0003] Existing capacitively coupled plasma devices usually use flat-plate capacitive coupling elements with a driving frequency of 13.56MHz, which are used to provide an excitation electric field to the reac...

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Problems solved by technology

However, although ICP, as a low-temperature, high-density plasma source, can guarantee the quality of material processing and surface modification to a certain extent, the electromagnetic field excited by traditional inductively coupled coils is only strong in the central part of the reaction chamber. , and the electromagnetic field excited at the edge of the reaction chamber is weak, so that the plasma density in the central part of the reaction chamber is high, and the plasma density in the edge part is low

Especially with the expansion of the processing size of the substrate and the corresponding increase in the volume of the reaction chamber, the plasma excited by the traditional inductively coupled coil will have a large asymmetry in azimuth, which makes the distribution of the plasma in the reaction chamber It is very uneven, and can only rely on free diffusion to make up for the low plasma density area in the periphery, which leads to uneven deposition or etching rate and thickness of the substrate film, affecting processing quality and stability

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