Gate drawing end clamping structure of planar power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device

Abstract

The invention discloses a gate-drain terminal clamping structure of a planar power MOSFET device, which is characterized in that a field oxide layer is located on the upper surface of a terminal region, a polycrystalline silicon layer is located on the upper surface of the field oxide layer, a dielectric layer is located on the upper surface of the field oxide layer and wraps the polycrystalline silicon layer, and a gate metal layer and a drain metal layer are both located on the upper surface of the dielectric layer; the gate metal layer is arranged along the inner circle of the terminal area, the drain metal layer is arranged along the outer circle of the terminal area, one end of the polycrystalline silicon layer continuously surrounds the inner circle of gate metal layer to the other end circle by circle and is connected with the outer circle of drain metal layer, and the polycrystalline silicon layer comprises a plurality of N-type polycrystalline silicon layers and a plurality of P-type polycrystalline silicon layers. And the P-type polycrystalline silicon layers and the N-type polycrystalline silicon layers are continuously and mutually staggered. The polycrystalline silicon in the terminal area is connected from the gate end of the inner ring to the drain end of the periphery in a surrounding mode, boron and phosphorus are doped in a spaced mode to form multiple PN structures, the influence on reverse breakdown voltage of an assembly is little, and therefore the reliability and the voltage resistance of a product are guaranteed.

Description

technical field [0001] The invention belongs to the field of electronic components, in particular to a gate-drain clamp structure of a planar power MOSFET device. Background technique [0002] As global technology usage increases, manufacturers in all industries are pushing for higher-end performance while trying to strike a balance between their high-end performance solutions and their product reliability solutions. Technicians are faced with the challenge of balancing design complexity, reliability and cost. From the perspective of protecting the components, additional costs will be added to the components, otherwise the protection of the components cannot be achieved to achieve product reliability and safety. Therefore, if the current or voltage withstand capability of the component itself is high enough, or the component itself has a protection function, the cost can be greatly reduced. [0003] For the metal oxide semiconductor field effect transistor (Power MOSFET) o...

AI Technical Summary

Problems solved by technology

However, because the diode structure is made of a whole piece of polysilicon in the terminal area of ​​the component to connect the gate drain, the reverse breakdown voltage of the component will be affected and insufficient, so it can only be used for low-to-medium voltage MOSFET components.

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