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Perovskite semiconductor crystal for ionizing radiation spectrum resolution and preparation method thereof

An ionizing radiation, perovskite technology, applied in the directions of crystal growth, chemical instruments and methods, single crystal growth, etc. The effect of good transmission performance, high resistivity and high stability

Pending Publication Date: 2022-08-09
WENZHOU ADVANCED MFG TECH INST OF HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Among the semiconductor materials currently used for energy spectrum resolution, high-purity germanium has the best performance, but because the band gap of single crystal germanium is too small, the resistivity at room temperature is too small to work at room temperature
However, due to the lack of heavy atoms, single crystal silicon cannot effectively deposit γ-ray energy, so it is not widely used.
At present, the mainstream energy spectrum resolution semiconductor material working at room temperature is CdZnTe, but due to cost and crystal growth problems, this type of material has not been used on a large scale.

Method used

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  • Perovskite semiconductor crystal for ionizing radiation spectrum resolution and preparation method thereof
  • Perovskite semiconductor crystal for ionizing radiation spectrum resolution and preparation method thereof
  • Perovskite semiconductor crystal for ionizing radiation spectrum resolution and preparation method thereof

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Embodiment Construction

[0022] The present invention will be further elaborated below with reference to examples and accompanying drawings.

[0023] Weigh 3.0954g FAI, 8.2982g PbI 2 , 0.1120g MABr, 0.2128g CsBr and 0.7340g PbBr 2 in 20 mL of dimethylformamide (FA 0.9 MA 0.05 Cs 0.05 PbI 2.7 Br 0.3 ), after complete dissolution (1 mol / L), the precursor solution was obtained by filtration. Take 5mL of the precursor solution in a 25mL small beaker and put it into a preheated oven at 106°C. After about 1 hour, crystals will precipitate. Take the precipitated crystals as seed crystals, add them to a beaker containing a new precursor solution, seal the beaker with tin foil, poke a small hole with a 5mL syringe, put it into a 70°C preheated oven, and apply a vacuum. After that, the oven temperature was increased according to the set program, and experienced constant temperature (70°C, 1h), rapid temperature rise (70°C-90°C, 1h), slow temperature rise (90°C-100°C, 30h) and constant temperature (100°C,...

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Abstract

The invention relates to a three-dimensional organic-inorganic hybrid perovskite radiation detection material and a preparation method thereof. The chemical formula of the material is FA (1-x-y) MAxCsyPbI (3-z) Brz, FA is formamidine, and MA is methylamine. The synthesis of the crystal material can be realized through the steps of heating crystallization, seed crystal induction, surface treatment and the like. The semiconductor radiation detector taking the crystal as an active layer has obvious response under the action of gamma rays or high-energy charged particles. Due to low preparation cost and high material stability, the material has huge potential in the field of energy spectrum resolution of ionizing radiation.

Description

technical field [0001] The invention relates to a semiconductor material capable of detecting gamma rays and various charged particles, in particular to a perovskite semiconductor crystal that can be used for ionizing radiation energy spectrum resolution and a preparation method thereof, belonging to the technical field of crystal material application. Background technique [0002] Semiconductor radiation detection materials are a class of materials that directly convert high-energy rays (X-rays, γ-rays, charged particles, neutrons) into electrical signals, thereby realizing high-energy ray detection. In particular, when performing energy spectrum resolution applications, due to the single particle counting mode, the energy of a single high-energy ray particle is relatively small, so this type of material is required to have few defects, high resistivity, and good carrier transport performance. Guaranteed to effectively collect tiny signals generated by single-particle actio...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B7/14C30B28/04
CPCC30B29/12C30B7/14C30B28/04Y02P70/50
Inventor 徐凌唐江牛广达谢作想熊焱
Owner WENZHOU ADVANCED MFG TECH INST OF HUAZHONG UNIV OF SCI & TECH
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