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Production method of high-brightness LED chip using zinc oxide as its window layer

A technology of light emitting diode and window layer, applied in the field of optoelectronics, can solve the problems of complex growth process, low production efficiency and high cost, and achieve the effects of simple growth process, low cost and high productivity

Inactive Publication Date: 2004-05-12
SHANDONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the prior art still has disadvantages such as complex growth process, long cycle, high cost, and low production efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] After finishing the growth of the upper limiting layer, put the sample into the ZnO special MOCVD equipment, and follow the steps below to grow the ZnO window layer:

[0013] The growth temperature is controlled at 350°C, the flow rate of the reaction source diethylzinc (DEZ) is 12ml / min, the flow rate of the reaction source tetrahydrofuran (THF) is 100ml / min, and the flow rate of the N-type dopant source trimethylaluminum (TMA) is 5ml / min. min, transfer the reaction source DEZ and THF, and the dopant source TMA from the vent line (VENT) to the growth line (RUN) to grow the N-type doped ZnO material as a window layer for 40 minutes; when the growth ends, immediately put the reaction source DEZ and THF, and the dopant source TMA are transferred from the RUN line to the VENT line. At the same time, the growth temperature is adjusted from 350°C to 20°C, the flow rate of DEZ is adjusted to 2ml / min, and the flow rate of THF is adjusted to 50ml / min. Trimethylaluminum (TMA) Th...

Embodiment 2

[0015] After finishing the growth of the upper limiting layer, put the sample into the ZnO special MOCVD equipment, and follow the steps below to grow the ZnO window layer:

[0016] The growth temperature is controlled at 370°C, the flow rate of the reaction source DEZ is 25ml / min, the flow rate of the reaction source THF is 100ml / min, and the flow rate of the N-type dopant source TMA is 3ml / min. The reaction source DEZ and THF, and the dopant source TMA are composed of The vent line (VENT) is transferred to the growth line (RUN) to grow N-type doped ZnO material as a window layer for 60 minutes; when the growth is completed, the reaction source DEZ and THF, and the dopant source TMA are immediately transferred from the RUN line to the VENT line, At the same time, the growth temperature was adjusted from 370°C to 20°C, the flow rate of DEZ was adjusted to 2ml / min, the flow rate of THF was adjusted to 50ml / min, and the flow rate of TMA was 0ml / min. At this point, the epitaxial g...

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PUM

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Abstract

When a metallic organic compound vapour phase deposition (MOCVD) method is used for epitaxial growth of diode material, the MOCVD epitaxy growth technology in continuously used after the growth of upper limitation layer is finished for low-temp. growth of N-type doped zinc oxide film as the window layer of LED while controlling the thickness of window layer less than 2 microns. Its advantages are simple growth process, short period, low cost and optimal current expansion and optical transmission effect.

Description

(1) Technical field [0001] The invention relates to a method for growing zinc oxide (ZnO) as a high-brightness light-emitting diode, belonging to the field of optoelectronic technology. (2) Background technology [0002] In 1992, Japan's Toshiba Corporation first developed a high-brightness AlGaInP green light-emitting diode (LED) with a Bragg reflection layer and a current isolation layer. The external quantum efficiency of the light-emitting diode is 0.7% at 573nm, and the luminous intensity is 2 candela. Adding a Bragg reflection layer between the double heterojunction and the substrate GaAs can reflect the light directed to the substrate back, thereby improving the luminous efficiency. [0003] In 1994, Hewlett-Packard of the United States developed an AlGaInP light-emitting diode with a gallium phosphide (GaP) transparent substrate. The luminous efficiency of this light-emitting diode exceeded that of other light-emitting diodes in the 560-650nm band. Under the conditi...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/44H01S5/32
Inventor 黄柏标张兆春于永芹崔得良秦晓燕潘教青
Owner SHANDONG UNIV
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