Nano-carbon based film field-emission pressure sensor

A nano-carbon-based thin film and pressure sensor technology, which is applied in the direction of measuring fluid pressure, measuring fluid pressure through electromagnetic components, instruments, etc., to achieve the effects of stable temperature characteristics, overall structure and preparation process simplification, and yield improvement

Inactive Publication Date: 2004-12-15
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of nano-carbon-based films as field emission pressure sensors has not been officially reported in the current domestic and foreign literature and patents.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano-carbon based film field-emission pressure sensor
  • Nano-carbon based film field-emission pressure sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Such as figure 1 As shown, the present invention mainly includes: electron emission cathode 1, anode 2, insulating isolation layer 3, emission cavity 4 and electrode lead 5, the material of electron emission cathode 1 adopts nano-carbon-based film, and electron emission cathode 1 and anode 2 are insulated The isolation layers 3 are connected, bonded and packaged in a high vacuum environment, and a field emission cavity 4 is formed between the electron emission cathode 1 and the anode 2, and electrode leads 5 are led out from the backs of the electron emission cathode 1 and the anode 2 respectively.

[0013] The electron emission cathode 1 includes: an electron emission material 6, a thin film metal electrode 7 and a silicon substrate 8. Micromachining technology is used to etch the silicon substrate 8 to form a concave structure, and a thin film metal electrode 7 is deposited on the bottom of the concave. The thin film metal electrode The material 7 can be metals such a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to view more

Abstract

A pressure sensor using field emission of the nanometer carbon-based film belongs to the technology of micro-processes and sensors. This pressure sensor chiefly includes electron emitting cathode, anode, insulating layer, emitting chamber and electrode wires. The material for the electron emitting cathode is a nanometer carbon-based film. The electron emitting cathode and anode are connected through the insulating layer and bonded and encapsulated under a high vacuum environment. The field emitting chamber is formed between the electron emitting cathode and anode, and the electrode wires are out from the backs of the electron emitting cathode and anode. The electron emitting cathode of the pressure sensor of the invention comprises a nanometer carbon-based film, so that the sensor has the advantages of high sensitivity, high temperature resistance.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a nano-carbon-based film field emission pressure sensor using a nano-carbon-based film as an electron-emitting cathode, and belongs to the field of microfabrication and sensor technology. Background technique [0002] Micro-electromechanical systems (MEMS) have shown broad application prospects due to their excellent performance and small size, among which MEMS pressure sensors have currently dominated the "greater than atmospheric pressure" pressure sensor market. In many applications, especially in the fields of aerospace and national defense, pressure sensors with high sensitivity, high temperature resistance, and radiation resistance are required, among which the field emission pressure sensor (FEPS) is considered to be an ideal Pressure Sensor. The existing field emission pressure sensor manufactured by MEMS technology uses a micro-silicon tip as a field emission cathode. The tip of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G01L9/00H01L49/00
Inventor 蔡炳初孙卓徐东郭平生
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap