Manufacturing method of capacitor

Abstract

A process for preparing the metal-insulator-metal (MIM) capacitor features that a 3D cup-shaped spacer structure is formed on the surface of a metallic plane to increase the electrode area of capacitor. Its preparing process is fully compatible with that of CMOS transistor, and can be used for the mixed-signal or RF signal on chip.

Description

technical field [0001] The present invention relates to a method for manufacturing a capacitor, in particular to a method for manufacturing a metal-insulator-metal (Metal-Insulator-Metal; MIM) capacitor used in integrated circuits. Background technique [0002] In today's Very Large Scale Integration (VLSI), a capacitor is one of the commonly used passive components. Capacitors are often integrated in active components such as bipolar transistors or complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor; CMOS) transistors. These capacitors are usually in the form of polysilicon-insulator-polysilicon (Polysilicon-Insulator-Polysilicon; PIP), metal-insulator-silicon (Metal-Insulator-Silicon; MIS), or metal-insulator-metal. Based on the compatibility with the process and the simplicity of the process, these different forms of capacitors are all planar. [0003] For mixed-signal (Mixed-signal) or radio frequency (Radio Frequency; RF) applications, MIM...

AI Technical Summary

Problems solved by technology

One of the ways to increase the capacitance density is to reduce the thickness of the dielectric layer, but at the cost of reduced linearity and larger leakage current due to larger operating electric field

Another way to increase capacitance density is to use high dielectric constant (High-k) materials, such as tantalum pentoxide. However, electrode materials with special structures must be used in complex process integration.

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