Manufacturing method of capacitor

A manufacturing method and technology of capacitors, which can be used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve problems such as large leakage current and reduced linearity.
CN1270368CInactive Publication Date: 2006-08-16TAIWAN SEMICON MFG CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
TAIWAN SEMICON MFG CO LTD
Publication Date
2006-08-16
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

A process for preparing the metal-insulator-metal (MIM) capacitor features that a 3D cup-shaped spacer structure is formed on the surface of a metallic plane to increase the electrode area of capacitor. Its preparing process is fully compatible with that of CMOS transistor, and can be used for the mixed-signal or RF signal on chip.
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Description

technical field

[0001] The present invention relates to a method for manufacturing a capacitor, in particular to a method for manufacturing a metal-insulator-metal (Metal-Insulator-Metal; MIM) capacitor used in integrated circuits. Background technique

[0002] In today's Very Large Scale Integration (VLSI), a capacitor is one of the commonly used passive components. Capacitors are often integrated in active components such as bipolar transistors or complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor; CMOS) transistors. These capacitors are usually in the form of polysilicon-insulator-polysilicon (Polysilicon-Insulator-Polysilicon; PIP), metal-insulator-silicon (Metal-Insulator-Silicon; MIS), or metal-insulator-metal. Based on the compatibility with the process and the simplicity of the process, these different forms of capacitors are all planar.

[0003] For mixed-signal (Mixed-signal) or radio frequency (Radio Frequency; RF) applications, MIM...

Claims

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