Method or growing N-Al co-blended p type ZnO transistor film by two step method

A co-doping, p-type technology, applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve the problem of low carrier mobility, unsatisfactory crystal quality and doping uniformity, p-type Conduction repeatability and stability are not high, to achieve the effect of improving mobility, good p-type conduction characteristics, and improving crystal quality

Inactive Publication Date: 2007-01-03
ZHEJIANG UNIV
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Problems solved by technology

At present, there have been reports of co-doping N-Ga, N-In, and N-Al to realize p-type ZnO, but there are some problems in the obtained co-doped p-type thin film. First, the crystal quality and doping uniformity are not ideal, and second, The mobility of carriers is relatively low, and the third is that the repeatability and stability of p-type conduction are not high

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  • Method or growing N-Al co-blended p type ZnO transistor film by two step method
  • Method or growing N-Al co-blended p type ZnO transistor film by two step method
  • Method or growing N-Al co-blended p type ZnO transistor film by two step method

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Embodiment Construction

[0017] The following combination figure 1 , the present invention will be further illustrated by examples.

[0018] Put the substrate on the sample holder 5 of the reaction chamber after cleaning, and place the substrate to be deposited facing down to effectively prevent the contamination of the substrate by granular impurities. The vacuum degree of the reaction chamber is pumped to 4×10 -3 Pa, with the zinc-aluminum alloy whose mass percentage of aluminum is 0.15% as the target, the target is placed on the S gun 9, and the N with a purity of more than 99.99% 2 O and O with a purity of 99.99% or more 2 As the sputtering atmosphere, the two gases enter the buffer chamber 4 through the inlet pipes 1 and 2 respectively, and after being fully mixed in the buffer chamber, they are introduced into the vacuum reaction chamber through the gas introduction pipe 11. The pressure in the vacuum chamber is controlled by the automatic pressure controller 8, and the pressure is 4Pa. N 2 ...

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Abstract

In the invention, magnetic control sputtering technology is used for growth of P-type ZnO crystal film. By the method, vacuum degree of reaction chamber is extracted to at least 4X10 to the power -3 pa, zinc-aluminium alloy that mass percent content is 0.1-0.3, NaO and O2 that purity is more than 99.99 percent are used as sputtering gas, the two gases are separately controlled by gas flomweter and mixed in buffer chamber, then are send to vacuum reaction chamber, under 3-5 Pa pressure, first step, substrate is heated to temp. 590-610 deg.C, a layer of N-Al codoped P type buffer film is deposited on the substrate, second step, the temp. of substrate is adjusted to 480-520 deg.C, then a layer of N-Al codoped P type ZnO crystal film is growth on the buffer layer. The crystal film produced by the invention has better doping uniformity, reproducibility, stability, super optical property and P type conducting characteristic.

Description

technical field [0001] The invention relates to a growth method of p-type ZnO crystal film. Background technique [0002] To realize the application of ZnO-based devices in many fields such as optoelectronics, the key is to prepare controllable n-type and p-type ZnO transparent conductive crystal films. At present, the research on n-type ZnO crystal thin films has been relatively sufficient. Real-time doped growth of n-type ZnO crystal thin films with excellent properties has been achieved by doping Al, Ga, In, F and other donor elements. However, the p-type doping of ZnO is much more difficult, mainly because the solid solubility of acceptor doping elements in ZnO is very low, the acceptor energy level is generally very deep, and ZnO itself has many intrinsic donor defects. (such as interstitial zinc Zn i and vacancy oxygen V O ), a highly self-compensating effect on the acceptor. How to achieve real-time doping of p-type ZnO thin films with excellent properties has bec...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/203C23C14/35C23C14/08
Inventor 叶志镇吕建国诸葛飞赵炳辉
Owner ZHEJIANG UNIV
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