Unlock instant, AI-driven research and patent intelligence for your innovation.

Process for preparing nano electronic phase change storage

A phase change memory and nanoelectronic technology, which is applied in the field of preparation of nanoelectronic phase change memory, can solve the problems of complex process and high cost

Inactive Publication Date: 2007-02-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

] They also have their own advantages and disadvantages, or the cost is too high, or the process is too complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for preparing nano electronic phase change storage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: Preparation of nano-scale phase change memory, the steps are:

[0016] (1) Use magnetron sputtering to deposit the lower electrode material W on the cleaned silicon or silicon dioxide substrate, the thickness is 100nm, the power is 300W, and the background vacuum is 4×10 -6 torr, the sputtering vacuum is 0.10Pa.

[0017] (2) Depositing aluminum and silicon dioxide sequentially, the thickness of aluminum is 100 nm, and the thickness of silicon dioxide is 50 nm.

[0018] (3) Use a photomask to etch the silicon dioxide layer to form an array of holes. The upper diameter of the hole is 2um, the lower diameter is smaller, and the spacing is 50um.

[0019] (4) Using anodizing method, in 10% concentration oxalic acid solution, 3mA / cm 2 Under the conditions, porous alumina is obtained. And each silica pore has only one alumina pore with a diameter of 40nm. The depth is 100 nm in thickness of the aluminum film.

[0020] (5) Deposit W into the hole by plasma enhanced ch...

Embodiment 2

[0025] Compared with Example 1, other conditions remain unchanged in this example, only the anodizing conditions in step (4) are changed, and the conditions are 15% oxalic acid solution 2mA / cm 2 Under current density conditions, small pores of different sizes are obtained in the pores, and the pore diameter is in the range of 40nm-200nm. The use of W nanopillars with different apertures results in different current densities and different erasing currents, thus making a useful attempt to explore multi-level storage.

Embodiment 3

[0027] The steps of this embodiment 1-4 are the same as those of embodiment 1. In step (5), magnetron sputtering is used to fill the hole with GeTeSb, and then steps (6), (7), and (8) are performed.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

The steps are: 1) to deposit a layer of down electrode material W on substrate material, 2) to depsit a layer of Al and a layer of SiO2 in turn, to etch a hole on SiO2 by exposuring and etching to make under layer Al being exposed, then to form porous aluminium oxide of the exposed part by positive electrode oxidizing method, at same time, to do further processing to each hole to form only one small aluminium oxide hole in nano size, or form nano holes array of aperture identic and distribution uniform, or to form nano holes array of aperture dispersion and distribution uniform, then to deposit thin film by plasma chemical gas phase deposition to realize W filling of nano hole, to realize smooth of top end of nano hole by nano polishing technology, then to realize nano memory unit by depositing phase transformation and electrode materials, leading wire and packaging.

Description

Technical field [0001] The invention relates to a method for preparing a nanoelectronic phase change memory. It belongs to the manufacturing process of nanomaterials in microelectronics. Background technique [0002] The semiconductor industry can be said to be one of the industries with the fastest development in the 20th century, the greatest impact on mankind, and with unlimited potential in the 21st century. In the past half century, the semiconductor industry has been developing in accordance with Moore's Law, that is, according to the rule of 0.7 times smaller feature size every three years. At present, its smallest size is the 90nm announced by Intel Corporation of the United States, and the more mature technology is 0.18um; however, Intel announced at the end of 2003 that Moore's Law will meet its limits in twenty years. At present, methods to obtain relatively small size mainly include electron beam exposure (EB), focused ion beam exposure (FIB), spacer technology, etc. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L45/00G11C11/56G11C13/00B82B3/00
Inventor 宋志棠夏吉林刘卫丽刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI