Electric interconnecting structure on substrate and producing method thereof
A technology of electrical interconnection and interconnection, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problem of increasing the effective dielectric constant
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[0080] A fabricated SiLK TM / HOSP BEST TM / BLOk TM structure
[0081] A. Lamination of dielectric layers as shown in Figure 2
[0082] steps
condition
adhesion promoter
hot plate baking
310℃ / 90s
First ILD layer (SiLK)
hot plate baking
310℃ / 2min.
CMP protection layer (HOSP BESt)
hot plate baking
310℃ / 2min
to bake
Furnace -415℃ / 60min.
CVD deposition
[0083] See Table I and Figure 2 above, by adding the AP 6000 TM A 200 mm diameter silicon wafer was treated with the adhesion promoter by coating the solution onto the wafer and then spinning at 3000 rpm for 30 seconds. At 22, the wafer was then placed on a hot plate at 310° C. for 120 seconds for a first hot plate bake.
[0084] After cooling the wafer to room temperature, the first layer of low-k dielectric (SiLK TM ) (Figure 2, layer 3). SiLK TM The solution w...
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