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Nanocrystalline quantum dot optical fiber and optical fiber amplifier

A fiber amplifier and nanocrystal technology, applied in the field of optoelectronics, can solve problems such as the impossibility of further improvement, flat gain, broadband, and the limitation of important noise indicators, and achieve the effects of high flat gain, extreme noise, and low noise

Inactive Publication Date: 2007-05-23
ZHEJIANG UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although natural element doping and series connection technology have greatly improved the performance of fiber amplifiers, but because the radiation (absorption) spectrum wavelength and spectral width of natural elements are constant, its flat gain, broadband, noise and other important indicators are restricted and cannot be further improved

Method used

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  • Nanocrystalline quantum dot optical fiber and optical fiber amplifier

Examples

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Embodiment 1

[0032] A semiconductor nanocrystal quantum dot optical fiber amplifier. One of the PbSe quantum dots is used as the fiber dopant, its diameter is 5.5nm, the radiation peak is at 1630nm, the first absorption peak is at 1550nm, the full width and half maximum of the radiation (absorption) spectrum is 150, and the doping concentration is 1.0×10 24 m -3; The nanocrystal quantum dot optical fiber amplifier includes: a pump light source, an input fiber coupler, a quantum dot fiber, an output fiber coupler, wherein the fiber length is 18.3 meters, the fiber core radius is 4.1 μm, and the core and cladding The refractive index difference is 0.0063, the pumping wavelength is 1458.7nm, and the pumping power is 50mW.

[0033] The relative values ​​of the absorption and radiation spectra of the semiconductor nanocrystal PbSe quantum dots have been measured. For the absolute value of the absorption cross section, it can be calculated by the Beer-Lambert law: the absorption capacity of Pb...

Embodiment 2

[0052] The basic structure and working principle of this embodiment are basically the same as those of Embodiment 1, the difference being that the doping concentration of the semiconductor nanocrystals of this embodiment is 5.0×10 24 m -3 , the diameter of PbSe quantum dots is about 4.5nm, the radiation peak is at 1200nm, and the first absorption peak is at 1100nm.

Embodiment 3

[0054] The basic structure and working principle of this embodiment are basically the same as those of Embodiment 1, the difference being that the doping concentration of the semiconductor nanocrystals of this embodiment is 3.0×10 24 m -3 , the diameter of PbSe quantum dots is about 4.5nm, the radiation peak is at 1200nm, and the first absorption peak is at 1100nm.

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Abstract

This invention provides one nanometer transistor quanta fiber and its amplifier, which adopts human nanometer transistor PbSe and CdSe as fiber mixture to form quanta fiber. The quanta fiber and pump source, input fiber coupler and output fiber coupler form quanta fiber amplifier.

Description

(1) Technical field [0001] The invention belongs to the technical field of optoelectronics, and relates to an optical communication device, in particular to an optical fiber and an optical fiber amplifier. (2) Background technology [0002] Traditional fiber amplifiers are fiber amplifiers doped with natural rare earth elements (such as erbium, thulium, ytterbium, etc.). Because of its characteristics of wide bandwidth, high gain, and low noise, it has become a key device in dense wavelength division multiplexing all-optical network communication. At present, Erbium-doped fiber amplifiers (EDFAs) are the most researched and applied. In order to increase the flat gain and bandwidth of fiber amplifiers, many different methods have been used, such as connecting traditional waveband (C-band) and long waveband (L-band) dual-core erbium-doped fibers in series to obtain ultra-bandwidth , gain flat amplifier. This new amplifier has a flat gain of 15dB between 1515-1620nm, a gain ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/02G02B6/13G02F1/39
Inventor 程成
Owner ZHEJIANG UNIV OF TECH