Method for reforming quartz glass crucible
A technology for quartz glass crucibles and crucibles, which is applied in glass molding, glass manufacturing equipment, chemical instruments and methods, etc., and can solve problems such as uneven surfaces, unstable arcs, and difficulty in uniformly heating the inside of crucibles, etc.
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example 1
[0059] For a quartz glass crucible having a crucible diameter of 32 inches a treatment was performed to remove air bubbles just below its inner surface, a heating device with 6 electrodes for a 3-phase alternating current was applied, wherein the radius r of the ring formed by these electrodes Can be extended to more than 1 / 4 of the opening radius R of the crucible, and the conventional electrode structure with 3 electrodes for 3-phase alternating current and 6 electrodes for 3-phase alternating current is also applied, which is carried out for 10 minutes power ups. In addition, single crystal silicon pulling experiments were carried out. The relevant results are shown in Table 1.
[0060] In the reforming process of the present invention, the heating device used has 6 electrodes relative to the 3-phase alternating current. Since the distance between the electrodes can be increased similarly to the above, the bubbles in the bottom and wall of the crucible can be reduced. On ...
example 2
[0063] For the quartz glass crucible with a crucible diameter of 32 inches, the treatment of removing impurities is carried out, and the heating device with 6 electrodes relative to the 3-phase alternating current shown in Figure 1 and the traditional 3-phase alternating current 3-electrode heating device are applied. 10 minutes. In addition, a test of pulling single crystal silicon was carried out. The relevant results are shown in Table 2. An unreformed product is also shown as Comparative Example 2.
[0064] For example, in the reforming treatment of the present invention, the impurities on the crucible wall and bottom have been completely removed. When this reformed crucible is used, the dislocation-free ratio of single crystal silicon is 80%, which is a very high dislocation-free ratio. Wrong ratio. On the contrary, in Comparative Example 1 with 3-phase alternating current flowing through the conventional 3-electrode structure, the contamination portion of the wall was...
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