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Active organic light-emitting diode pixel arrangement and method for making same

A technology of light-emitting diodes and pixel structures, applied in the direction of electroluminescent light sources, semiconductor/solid-state device manufacturing, light sources, etc., can solve problems such as property degradation, short circuit, and high current density of the light-emitting layer 116, so as to improve surface roughness and avoid The effect of defects

Inactive Publication Date: 2007-08-15
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Please refer to FIG. 2, in an active organic light emitting diode, the roughness of the surface of the anode layer 110 will affect the properties of the light-emitting layer 116 formed above it, and if the surface of the anode layer 110 is too rough, it is easy to make the protrusions located on it The current density of the light-emitting layer 116 above the part is too high, causing the properties of this part to decline rapidly, and even the protruding part of the anode layer 110 may be short-circuited with the cathode layer 118 to cause defects.
The gate dielectric layer 104 formed under the anode layer 110 has a direct impact on the roughness of the anode layer 110. If the surface of the formed gate dielectric layer 104 is not flat enough, it will further affect the anode that is sputtered later. Roughness of layer 110

Method used

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  • Active organic light-emitting diode pixel arrangement and method for making same
  • Active organic light-emitting diode pixel arrangement and method for making same
  • Active organic light-emitting diode pixel arrangement and method for making same

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Embodiment Construction

[0031] As shown in FIG. 3 , it is a schematic top view of the pixel structure of an active organic light emitting diode according to a preferred embodiment of the present invention; as shown in FIG. 4 , it is a schematic cross-sectional view from I-I' in FIG. 3 .

[0032] Please refer to FIG. 3 and FIG. 4, the pixel structure of the active organic light emitting diode of the present invention is suitable to be constructed on a substrate 200, which includes a thin film transistor 230, a scanning wiring 201, a data wiring 211, and an anode layer 210 , a gate dielectric layer 204 , a passivation layer 214 , a light emitting layer 216 and a cathode layer 218 .

[0033] Wherein, the thin film transistor 230 is disposed on the substrate 200, and the thin film transistor 230 includes a gate 202, a channel layer 206, a source 212a, and a drain 212b. In this embodiment, an ohmic contact layer 208 is further included between the channel layer 206 and the source electrode 212a and the dr...

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Abstract

The invention is a pixel construction of active organic LED, applied to a base plate, including a film transistor, a scan wiring, a data wiring, an anode layer, a grid dielectric layer, a light-emitting layer and a cathode. Wherein the anode layer is on the surface of the base plate but not on the grid dielectric layer, which improves surface roughness of the anode layer.

Description

technical field [0001] The present invention relates to a structure of an organic light emitting diode (OLED) and a manufacturing method thereof, and in particular to a pixel structure of an active organic light emitting diode (Active Matrix OLED) and a manufacturing method thereof. Background technique [0002] Organic light-emitting diodes are semiconductor elements that can convert electrical energy into light energy and have high conversion efficiency. Common applications are light-emitting elements for indicator lights, display panels, and optical read-write heads, etc. Due to the characteristics of organic light-emitting diodes, such as no viewing angle, simple process, low cost, high response speed, wide temperature range and full color, etc., which meet the requirements of display characteristics in the multimedia era, it has become a research boom in recent years. [0003] An active organic light-emitting diode device is under active development today, which forms a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00H01L51/50H05B33/00G09F9/33G09G3/00
Inventor 陈韵升
Owner AU OPTRONICS CORP