DC arc plasma equipment and process for preparing micron-class and nano-class powder material

A technology of nanoscale powder and plasma, which is applied in the field of devices for spherical micron and nanoscale powder materials, which can solve problems such as short service life, inability to control particle size well, and inability to realize industrial scale.

Inactive Publication Date: 2002-11-27
纪崇甲 +1
View PDF0 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the current DC arc plasma device for producing ultrafine powder has a short service life and poor stability, and cannot realize indus

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • DC arc plasma equipment and process for preparing micron-class and nano-class powder material
  • DC arc plasma equipment and process for preparing micron-class and nano-class powder material
  • DC arc plasma equipment and process for preparing micron-class and nano-class powder material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] to U 3 Si 2 As raw material, melt U with direct current arc argon-helium (main gas) plasma flame of the present invention 3 Si 2 The fine powder is quenched by the quencher, and collected by gravity sedimentation, cyclone separator and bag dust collector to obtain spherical U 3 Si 2 The finished product has a spheroidization rate of 85-95%, and the feeding rate is 3 kg / hour. See figure 2 , where a is the U obtained by mechanical pulverization 3 Si 2 Powder, b, c, d, e and f are U prepared by the device of the present invention 3 Si 2 Powder.

Embodiment 2

[0038] with Sb 2 o 3 The raw material is melted and vaporized by DC arc nitrogen (main gas) plasma flame, quenched by a quencher, collected by a cyclone separator and a bag dust collector, and the finished product is obtained, with an annual output of 500-1000 tons. See image 3 a, b, c and d, showing that the device of the present invention obtained 30-60 nm Sb 2 o 3 of powder materials.

Embodiment 3

[0040] SiO 2 As raw material, it is melted and vaporized by nitrogen (main gas) plasma flame, quenched by wall quencher and supersonic nozzle, collected by gravity, cyclone separator and bag dust collector to obtain finished products, and to prepare micron and nanoscale Spherical SiO 2 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A DC arc plasma equipment for preparing micron-class and nanometre-class powder lot (SiO2, U3Si2, Sb2O3, etc.) and its process are disclosed. Its advantages are long service life (50-100 hr for cathode and 50-200 hr for anode), higher heat efficiency, controllable granularity and continuous production.

Description

field of invention [0001] The invention relates to a device and a method for preparing micron and nanoscale powder materials, especially spherical micron and nanoscale powder materials, by DC arc plasma. Background technique [0002] Because nano-scale particles have many excellent characteristics, they can transform traditional industries, such as high molecular weight composite materials, coatings, rubber, pigments, ceramics, cosmetics and antibacterial materials, etc., which can greatly improve the performance of products and increase the value of products. Due to the excellent performance of products , after my country's entry into WTO, product quality can challenge the world, so it is of great significance. [0003] For the production of nanomaterials, such as silicon dioxide, chemical methods are mostly used at home and abroad. The process of chemical methods is long and cumbersome, and most of them need to use acid and alkali, which causes certain pollution to the envi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B01J19/08C04B35/622
Inventor 纪崇甲纪天舒纪小东杨太和
Owner 纪崇甲
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products