Novel button anti-reflection film structure

Abstract

This invention applies a technique of a base anti-reflection film (BARC) composed of organic BARC and inorganic BARC. This invention puts forward a complex anti-reflection structure combined organic and inorganic BARC with the inorganic BARC under the organic BARC which utilizes either the advantage of organic BARC flat or reduces wide line loss in the traditional organic BARC etching since inorganic BARC etching since inorganic BARC of good selection is used.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing technology, and in particular relates to a bottom anti-reflection film structure. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink. The current mainstream technology of 0.18 μm means that the length of the gate is 0.18 μm. The continuous reduction of line width firstly requires that the lines defined by the photolithography process become narrower and narrower, and of course the requirements for the etching process are also higher and higher. In order to meet the requirements of lithography, in addition to the continuous upgrading of lithography equipment, people also use other technologies to improve the quality and precision of lithography, and the use of anti-reflection coating (ARC) is one of them. The role of ARC is to prevent light from being reflected at the substrate int...

AI Technical Summary

Problems solved by technology

Of course, due to the use of PECVD method, it is worse than organic BARC in terms of process development and process stability.

In addition, the use of inorganic BARC will cause changes in the thickness of the photoresist on the surface of the silicon wafer, which will also have a certain impact on the uniformity of the line width and the depth of field during photolithography.

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