Process for preventing heavy duty optical resistance from collapsing

A technology for heavy industry light and photoresist, applied in photosensitive material processing, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of reduced production capacity, complex process, and increased production time

Inactive Publication Date: 2003-12-31
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, readjusting the process parameters of the exposure machine will increase the production time, make the process more complicated and reduce the production capacity. If the entire batch of chips is directly replaced, the production cost will be too high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for preventing heavy duty optical resistance from collapsing
  • Process for preventing heavy duty optical resistance from collapsing
  • Process for preventing heavy duty optical resistance from collapsing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention discloses a method for preventing the collapse of photoresist in heavy industry, and the method of the present invention will be described below in the form of a preferred embodiment.

[0022] Please refer to figure 1 , which shows a cross-sectional schematic diagram of a process for forming a gate of a transistor. A gate oxide layer 12 is formed on a semiconductor substrate 10 . Preferably, the gate oxide layer 12 can form a layer of silicon dioxide (SiO 2 ). Next, a polysilicon layer 14 is formed on the gate oxide layer 12 . The polysilicon layer 14 can be formed by chemical vapor deposition with a thickness of about 500-5000 angstroms, preferably 2000 angstroms. Subsequently, an anti-reflective coating (Anti-Reflective Coating, ARC) 16 is covered on the polysilicon layer 14 . Preferably, the anti-reflection coating layer 16 can be deposited on the polysilicon layer 14 by a chemical vapor deposition method of silicon oxynitride (SiON) materi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to view more

Abstract

The present invention discloses a method for preventing collapse of heavy work photoresistive, comprising: after removing dissatisfactory photoresistive on chip die and before once more proceeding micro - simulacrum procedure, firstly placing the core sheet in a deposition reaction room for a period of time where nitrous oxide gas is ventilated, so as to deposit a rich nitrogenous primary oxygen layer on the surface of the core sheet, and restoring the humidity and reflectivity of the core sheet surface to the relevant range of the photoresistive before heavy work. According to the method of the present invention, the exposure badness and the collapse of photoresistive resulted therefrom due to the change of surface moisture and reflectivity of the core sheet can be avoided, so that it can improve the collapse state of heavy work photoresistive effectively.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a photoresist rework process for preventing the rework photoresist from collapsing. Background technique [0002] Complementary Metal-Oxide Semiconductor (CMOS) has the advantages of low power consumption and high integration, and has gradually become an important component in today's integrated circuits. In addition to multiple steps of oxidation, doping and deposition, the formation process of a general CMOS structure needs to go through several photolithography and etching processes to define the structure of each layer of the CMOS. Since the CMOS gate (Gate) is used as a switch to control the tunneling effect of the CMOS, the manufacturing quality of the gate deeply affects the performance of the CMOS. The gate is usually formed by sequentially depositing material layers such as a silicon dioxide layer and a polysilicon layer on a silicon substrate, and then defining the structure ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/26H01L21/31H01L21/311
Inventor 杨人龙曾乙峰高明宽曾素玲陈隆
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap