Process for preventing heavy duty optical resistance from collapsing

Abstract

The present invention discloses a method for preventing collapse of heavy work photoresistive, comprising: after removing dissatisfactory photoresistive on chip die and before once more proceeding micro - simulacrum procedure, firstly placing the core sheet in a deposition reaction room for a period of time where nitrous oxide gas is ventilated, so as to deposit a rich nitrogenous primary oxygen layer on the surface of the core sheet, and restoring the humidity and reflectivity of the core sheet surface to the relevant range of the photoresistive before heavy work. According to the method of the present invention, the exposure badness and the collapse of photoresistive resulted therefrom due to the change of surface moisture and reflectivity of the core sheet can be avoided, so that it can improve the collapse state of heavy work photoresistive effectively.

Description

technical field

[0001] The invention relates to a semiconductor process, in particular to a photoresist rework process for preventing the rework photoresist from collapsing. Background technique

[0002] Complementary Metal-Oxide Semiconductor (CMOS) has the advantages of low power consumption and high integration, and has gradually become an important component in today's integrated circuits. In addition to multiple steps of oxidation, doping and deposition, the formation process of a general CMOS structure needs to go through several photolithography and etching processes to define the structure of each layer of the CMOS. Since the CMOS gate (Gate) is used as a switch to control the tunneling effect of the CMOS, the manufacturing quality of the gate deeply affects the performance of the CMOS. The gate is usually formed by sequentially depositing material layers such as a silicon dioxide layer and a polysilicon layer on a silicon substrate, and then defining the structure ...

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