Single-electron storage designed based on coulomb damping principle and its preparing method

Abstract

This invention relates to a single electron memory and it spreparation method designed on coulomb damping theory including a monocrystal silicon layer on the surface with SOI as the substrate to be doped and etched to a carbon nm transistor structure containing an electrode as the source, an electrode as the drain and a grid, a single wall carbon nanometer tube is set on the two electrodes to form ohmic contact, the grid is between the two electrodes and at a side of the carbon nm tube, the other tube with more than two tunnel through joints is set on the grid and the source or grain of the transister to form ohmic contact. The said device is easy to be prepared.

Description

technical field [0001] The invention belongs to a single-electron memory device, in particular to a single-electron memory with low power consumption that can work at room temperature and a preparation method thereof designed and prepared by utilizing the Coulomb blocking effect of nanowires with a multi-quantum dot structure. Background technique [0002] Memory accounts for 40% of the world's semiconductor market. Semiconductor products other than memory are updated every 2 years, while memory is a generation every 18 months. Taking the development of dynamic memory (DRAM) as an example, in 1988 Japan The line width of the lines on the silicon chip reached 0.8 microns, and the 4Mb DRAM came out, thus entering the era of ultra-large-scale integration ULSI; in 1992, the 16Mb chip with a line width of 0.5 microns was put into production; in 1994, the 64Mb chip with a line width of 0.35 microns was launched. Chip production; 0.13-micron 4Gb DRAM will soon be realized. However...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the difficulties faced by the development of traditional memory and single electron memory, overcome the existing MTJ / MOSFET structure memory, limit the defect of further improvement of integration; low, resulting in very low operating temperature of the storage device; and the high power consumption of the device; thereby providing a simple structure, high integration, faster use of the Coulomb blocking effect of quantum dots in carbon nanotubes and carbon Nanotube transistor, preparation of single-electron memory with low power consumption and preparation method thereof

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