Plasma etching method and device

Abstract

The present invention provides a plasma etching method. Between upper electrode and lower electrode the etching gas and plasma for diluting said gas are produced, it utilizes the charge exchange reaction of ions being in said plasma and neutral particles to make the neutral particles be ionized and injected into the semiconductor chip W for etching said chip.

Description

technical field [0001] The present invention relates to a plasma etching method and apparatus for etching an object to be etched such as a silicon dioxide film using plasma of a reactive gas. Background technique [0002] In semiconductor manufacturing technology, when wiring is formed on a semiconductor substrate such as a silicon wafer, it is generally necessary to form wiring holes such as contact holes and via holes in a silicon dioxide film formed on the substrate. In order to form such wiring holes, plasma etching techniques capable of efficiently forming high-precision holes are almost all used recently. This technology is to arrange the substrate on the sensor that doubles as the electrode arrangement in the processing chamber, and supply the etching gas as the reactive gas to the processing chamber. At the same time, by applying high-frequency voltage to the above-mentioned inductor, plasma of the reactive gas is generated in the processing chamber, A technique in ...

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Problems solved by technology

However, recently, the size of the substrate to be processed has been increased, and the size of the electrode has been increased significantly. The disadvantages derived from this (enlargement and complexity of the cooling mechanism, or increase in power consumption, etc.) are too large, and it cannot be said to be effective or practical. the solution

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