High-brightness ultrathin light semiconductor device
An optical semiconductor, high-brightness technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as shedding, thermal deformation of printed circuit boards, expensive manufacturing costs, etc., and achieve the effect of improving brightness
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[0028] Such as figure 2 As shown, the ultra-small, ultra-light and thin Chip LED optical semiconductor device of the present invention is composed of a positive lead frame (Anode Lead Frame) (D), a negative lead frame ((Dathode Lead Framd) (C), a positive and negative lead frame (D) (C) and the gold wire (A1) (A2) for energizing between the light-emitting chip (A), the light-transmitting epoxy resin (F) that encapsulates the two lead frames (D) and (C), Lead The 10-50um protruding lower epoxy resin (H) formed at the lower end and the positive lead through hole (B1) and the negative lead connecting the Lead Frame, CathodeLead, the lower epoxy resin (H) and the upper epoxy resin (G) Hole (B2) constituted.
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