High-brightness ultrathin light semiconductor device

An optical semiconductor, high-brightness technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as shedding, thermal deformation of printed circuit boards, expensive manufacturing costs, etc., and achieve the effect of improving brightness

Inactive Publication Date: 2004-04-14
陈洪花
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The above-mentioned representative surface mount device (Surface Mounting Device) ultra-small light-emitting diode devices generally use thicker printed circuit boards (PCB substrates), and these printed circuit boards (PCB substrates) (J) have relatively low heat resistance , the thermal shock (Stress) that occurs during the production of light-emitting diodes causes thermal deformation of the printed circuit board (PCB substrate) (J), resulting in weakened adhesion between PCB and epoxy resin, so the reliability of such light-emitting diodes is difficult Guaranteed
[0009] In the production of printed circuit boards (PCB substrates), if you want to ensure reliability, first of all, the manufacturing process will become very complicated, which will increase the manufacturing cost
Secondly, it is impossible to realize the thinning and lightening of ultra-small CHIP LED due to the use of thick PCB
In addition, the light inversion rate of the printed circuit board (PCB substrate) is very low, and the inversion rat

Method used

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Examples

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Example Embodiment

[0028] Such as figure 2 As shown, the ultra-small, ultra-light and thin Chip LED optical semiconductor device of the present invention is composed of a positive lead frame (Anode Lead Frame) (D), a negative lead frame ((Dathode Lead Framd) (C), a positive and negative lead frame (D) (C) and the gold wire (A1) (A2) for energizing between the light-emitting chip (A), the light-transmitting epoxy resin (F) that encapsulates the two lead frames (D) and (C), Lead The 10-50um protruding lower epoxy resin (H) formed at the lower end and the positive lead through hole (B1) and the negative lead connecting the Lead Frame, CathodeLead, the lower epoxy resin (H) and the upper epoxy resin (G) Hole (B2) constituted.

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Abstract

LED chip (A) (InGan/GaN) is glued on Die PAD CUP of lead frame by using insulated transparent chip adhesive (E) (UV Cure). Light beam in inverse direction emitted by LED passing through insulated transparent epoxy resin adhesive is reflected back by Die PAD CUP with high reflectivity Ag being coated. Thus, much light-beam is in the direction wanted so as to obtain microminiature LED with higher brightness. Moreover, the invention also reduces stress caused by thermal shock.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an ultra-small (Small Size) and ultra-thin (Thin Thichness) light-emitting diode. In more detail, it is to directly paste the InGaN / GaN light-emitting diode chip (Chip) on the silver-plated lead frame Die PAD Cup, make full use of the reverse rate of silver, and improve the brightness of the ultra-small package (Package) LED. The invention of the Package structure. Background technique: [0002] Generally speaking, optical semiconductor devices are products that utilize the photoelectric conversion characteristics of semiconductors to transmit photoelectric signals. Optical semiconductor devices are distinguished from light-emitting devices (350nm-990nm) that emit light forward after converting electrical signals into optical signals like light-emitting diodes, and photosensitive devices that receive optical signals and convert them into electrical signals (p...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/60H01L33/62
CPCH01L2224/32225H01L2224/32245H01L2224/45144H01L2224/48227H01L2224/48237H01L2224/48247H01L2224/48257H01L2224/73265H01L2924/181
Inventor 陈洪花
Owner 陈洪花
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