Electronic beam focusing equipment and electronic beam projection micro shadow system using the same equipment

Abstract

An electron beam focusing apparatus and an electron beam projection lithography system employing the apparatus are provided, to allow a uniform electromagnetic field to be formed between a wafer and an electron beam emitter and to minimize the bending of an electron beam path due to the vibration of a vacuum chamber. The electron beam focusing apparatus comprises upper and lower magnets which are arranged in the upper and lower exterior parts of a vacuum chamber surrounding the space where a wafer is mounted, respectively, and form a magnetic field inside the vacuum chamber; upper and lower pole pieceswhich penetrate the ceiling wall and bottom wall of the vacuum chamber, respectively and are magnetically contact with the upper and lower magnets, respectively; and upper and lower projection parts which are projected in a ring-shape in the mutual corresponding faces of the upper and lower pole pieces. Preferably rubber plates containing a ferromagnetic material are inserted between the upper and lower magnets and the upper and lower pole pieces, respectively.

Description

field of invention [0001] The present invention relates to an electron beam projection lithography system (EPL), in particular to an electron beam focusing device for controlling the path of an electron beam emitted by an electron beam emitter and an EPL system using the same. Background technique [0002] During semiconductor manufacturing, various printing techniques are used to form desired patterns on the surface of a substrate. Conventional photolithography uses, for example, ultraviolet rays, and there are linewidth limitations when using this technique. Accordingly, next-generation lithography (NGL) has recently been proposed, with which smaller and integrated semiconductors with nanoscale line widths can be realized. Next-generation lithography, for example, includes electron beam projection lithography (EPL), ion projection lithography (IPL), extreme ultraviolet lithography (EUVL), and near X-ray lithography. [0003] Among the NGL systems, since the EPL system ha...

AI Technical Summary

Problems solved by technology

In this way, the path of the electron beam emitted by the emitter 20 is bent, and it is difficult to form a pattern with a line width of nanometer order.

[0009] Another disadvantage of the conventional EPL system is that since the vacuum chamber 10 is made of a ferromagnetic material such as steel plate, the magnetic flux generated by the magnets 71 and 72 will leak through the vacuum chamber 10 and cannot be concentrated between the emitter 20 and the wafer 30

In this way, a uniform magnetic field cannot be generated between the transmitter 20 and the wafer 30, and in order to generate sufficient magnetic field strength, the system uses large external magnets 71 and 72, which increases the manufacturing cost

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