Saphire base nitride chip scribing method

Abstract

The method includes following steps: based on scribing requirement, using lead plate makes irradiation baffle with several slots in middle; adhibiting rear face of sapphire crystal with GaN being developed on the irradiation baffle closely, carrying out irradiation of Gamma ray by using Co60 in irradiation dose about 10 to the power 7 Rad; then, rotating baffle at 90 degree, carrying irradiation with same dose forms meshy irradiation lines on substrate of sapphire; scribing is carried out for exposured GaN / sapphire LED chip along irradiation line by using KrF quasi molecule laser in 248nm; splinting is carrier out for GaN / sapphire LED chip scribed by using splinter device, then testing chip through probe and sorting chips. Advantages of the invention are smooth edge, not affecting on photoelectric properties of GaN.

Description

Technical field:

[0001] The invention relates to a scribing method for a sapphire-based nitride chip. Background technique:

[0002] Due to the wide application of ultra-high brightness GaN / sapphire laser diode (LED) in indoor and outdoor color display, traffic signal indication, LED background light source and white lighting source, its production scale has expanded rapidly. In the production process, the GaN / sapphire LED chip cutting problem has become one of the important factors hindering the further reduction of its production cost. Since GaN / sapphire is much harder than ordinary compound semiconductor materials such as GaAs and GaP, when cutting with a grinding wheel tool, the amount of tool wear is extremely large, and the amount of cut is also small. Generally, diamond cutters are used to cut GaN / sapphire LED chips, and the cutting is generally divided into two steps: scribing and splitting: first, use a device equipped with a diamond cutter to scribe according to t...

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