Manufacture of polysilicon crystal thin films by quasi-molecular laser re-crystallization process

Abstract

First, the method provides a substrate, where first region, second region and third region are defined on surface of the substrate. Next, a film of amorphous silicon is formed on the substrate, and a part of the film of amorphous silicon is removed in order to form an alignment mark on the third region. Then, a mask layer is formed on the film of amorphous silicon, and the mask layer in the first region is removed. Recrystal procedure is carried out to make recrystallization of the film of amorphous silicon in first region become a polysilicon film.

Description

technical field [0001] The invention provides a method for manufacturing a polysilicon film, especially a method for making a polysilicon film by using an excimer laser crystallization (ELC) process. Background technique [0002] With the rapid development of technology, thin, light, power-saving and portable smart information products have filled our living space, and monitors have played a very important role in it, whether it is mobile phones, personal digital assistants or notebook computers , both require a display as a human-machine communication interface. However, the amorphous silicon thin-film transistor liquid crystal display (a-TFT LCD), which has been mass-produced today, is difficult to further meet the requirements of lightness, lightness, power saving, and high image quality due to the limitation of carrier mobility. Next will be low temperature polysilicon (LTPS) thin film transistor liquid crystal displays. [0003] In liquid crystal displays, since the h...

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Problems solved by technology

[0009] In the above-mentioned excimer laser recrystallization process, after defining the position of the alignment mark, patterning the masking layer, and finally forming the polysilicon island, each photolithography process needs to be used once, that is to say, on the entire polysilicon It is necessary to use three photolithography processes to form a polysilicon film with the polysilicon island structure. Therefore, although the above method can control the position of the grain boundary formation, the production process is quite complicated, and it requires a lot of time. More process time will also lead to an increase in manufacturing costs. Therefore, how to simplify the excimer laser recrystallization process is an important research topic at present.

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