Silicon photoelectric probe compatible with deep submicron radio frequency technology

A deep submicron, silicon photoelectric technology, applied in photometry, electrical solid-state devices, optical radiation measurement, etc., can solve problems such as limiting the range of optical fiber coupling activities, large parasitic capacitance, etc., to achieve high yield, improve performance, and high speed effect

Inactive Publication Date: 2004-12-22
TIANJIN UNIV
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Problems solved by technology

Hybrid integration makes the surface near the detector have protruding bonding wires, which limits the active range o

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  • Silicon photoelectric probe compatible with deep submicron radio frequency technology
  • Silicon photoelectric probe compatible with deep submicron radio frequency technology

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[0015] The present invention is realized by the following methods: figure 1 Displays the layout structure of the photodetector, which is used to make on the deep sub-micron RF_CMOS process, figure 2 Shows the longitudinal cross-sectional structure diagram of the photodetector, mainly showing the longitudinal size of the photodetector.

[0016] p-type semiconductor substrate 1, deep n-type well 2, the deep n-type well 2 is fabricated in the substrate 1; n-type well 4, the n-type well 4 is fabricated on the substrate 1; shallow trench isolation region 3 , The shallow trench isolation region 3 is fabricated in the n-type well 4; four interdigitated P+ type diffusion regions 4, the four interdigitated P + Type diffusion region 6 is arranged on the n-type well 4; P + Type protection ring 7, the P + The type guard ring 7 is fabricated on the substrate 1 and around the n-type well 4; the anti-reflection film layer 11 is deposited on the four interdigitated P + Type diffusion zone 6; by ...

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Abstract

The invention discloses a high-speed silicon photoelectric detector compatible with deep submicron radio-frequency_compensatory metal oxide semiconductor (RF_COMS) technique, and it adopts a technical project: there is a deep n-type trap arranged in a p-type semiconductor substrate, a shallow channel is arranged in the n-type trap, four interdigital p+-type diffusion regions are arranged on the n-type trap; the diffusion regions are provided with antireflecting films, the p+-type diffusion regions and the n-type trap compose a p-n junction of photoelectric diode and the n-type trap and the P+-type protective rings compose a screening diode. It can be applied in many fields like CD-ROMs, digital video CDs (DVDs), and digital systems.

Description

technical field [0001] The invention relates to a photodetector structure and a manufacturing method, in particular to a silicon-based photodetector structure fully compatible with deep submicron radio frequency standard complementary metal oxide semiconductor (RF_CMOS) technology. Background technique [0002] At present, the mainstream receivers are all compound photodetectors, which are mixed and integrated with silicon-based receiver ASICs by wire bonding (WIRE BONDING). Hybrid integration makes the surface near the detector have protruding bonding wires, which limits the active range of fiber coupling, and usually the area of ​​a bonding pad is 100×100μm 2 , resulting in a large parasitic capacitance. The invention not only realizes monolithic integration of full siliconization of the optical receiver, but also realizes full compatibility with high-speed CMOS circuits, such as radio frequency integrated circuits (RFIC). This makes the f...

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Application Information

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IPC IPC(8): G01J1/02H01L27/14H01L31/10
Inventor 毛陆虹李炜陈弘达陈永权张晓潇
Owner TIANJIN UNIV
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