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Method for preparing indium-gallium-arsenic material of gradation band gap

A technology of indium gallium arsenide and indium phosphide is applied in the field of preparation of materials for active regions of semiconductor optoelectronic devices, and can solve the problems of complex production degree and the like

Inactive Publication Date: 2005-01-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the device of this structure needs to make multi-segment electrodes, and the 3dB gain bandwidth is much smaller than 100nm
[0005] 3) Cascade structure (see Appl.Phys.Lett., Vol.58, No.18, 1991, pp1976-1978): The structure is that the active region is composed of two materials with different wavelengths, and its 3dB gain bandwidth is wide , but still rely on the fabrication of multi-segment electrodes to achieve wide bandwidth
[0006] 4) The active region is composed of several quantum wells with the same composition but different sizes (see Electron. Lett., Vol.33, No.19, 1997, pp1142-1 143) or quantum wells with the same size but different compositions Composition (see IEEEJ.QuantumElectron., Vol.39, No.3, 2003, pp426-430): This structure uses quantum wells of different thicknesses or quantum wells of different components to lase different wavelengths to obtain a larger 3dB Gain bandwidth, but in order to obtain a large and flat gain bandwidth, it is necessary to carefully optimize the size or composition of the quantum well, so its fabrication is relatively complicated

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  • Method for preparing indium-gallium-arsenic material of gradation band gap
  • Method for preparing indium-gallium-arsenic material of gradation band gap
  • Method for preparing indium-gallium-arsenic material of gradation band gap

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preparation example Construction

[0027] Please refer to FIG. 1, a method for epitaxy preparation of a graded InGaAs material according to the present invention is characterized in that it includes the following steps:

[0028] (1) epitaxially grow one layer of indium phosphide or gallium arsenide buffer layer 60 on substrate 70, said substrate 70 is indium phosphide substrate or gallium arsenide substrate; said buffer layer 60 is phosphorus An indium buffer layer, the thickness of the buffer layer is about 1 μm;

[0029] (2) epitaxially growing a lower waveguide layer 50 on the buffer layer 60;

[0030] (3) epitaxially growing the graded InGaAs active layer 40 on the lower waveguide layer 50 , when growing the graded InGaAs material, the growth temperature is between 600° C. and 630° C., and the growth pressure is 50 mbar;

[0031] (4) Next, grow an undoped waveguide layer 30 on the graded InGaAs active layer 40;

[0032] (5) The upper waveguide cover layer 20 is grown on the undoped waveguide layer 30, whe...

Embodiment

[0036] The invention is a quasi-continuously strained InGaAs (indium gallium arsenic) bulk material grown by LP-MOVPE (low pressure-metal organic vapor phase epitaxy), and obtains the desired Strain, the technical solution is as follows (taking InP (indium phosphorus) base as an example) (see Figure 1 in combination):

[0037] 1) The cleaned InP substrate is placed in a MOVPE (metal organic vapor phase epitaxy) reaction chamber (not shown in the figure);

[0038] 2) Epitaxial growth of a lower waveguide layer matching the InP lattice on the InP substrate 70 (the pressure in the reaction chamber is 22 mbar, and the temperature is 650 degrees Celsius);

[0039] 3) Epitaxial growth of graded InGaAs bulk material on the lower waveguide layer. When growing this layer of graded InGaAs bulk material, the key is to control the source flow of TMGa during the growth process, so that the source flow of TMGa has a large mismatch with the substrate InP The amount (this amount corresponds ...

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Abstract

The invention is an epitaxial making method of graded In-Ga-As material, including the steps as follows: (1) making an epitaxial growth of an indium phosphide or gallium arsenide buffer layer on a substrate; (2) making an epitaxial growth of a bottom waveguide layer on the buffer layer; (3) making an epitaixal growth of a graded In-Ga-As active layer on the bottom waveguide layer; (4) then growing an top undoped waveguide layer on the active layer; (5) growing a top waveguide cover layer on the undoped waveguide layer; (6) finally growing a contact layer and completing the preparation.

Description

technical field [0001] The invention relates to an indium gallium arsenide (InGaAs) semiconductor material with a graded bandgap grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE), in particular to a semiconductor optoelectronic device (semiconductor optical amplifier, tunable laser, A method for preparing active region materials of superluminescent light emitting diodes, etc. Background technique [0002] In the production of many semiconductor optoelectronic devices, such as tunable lasers, optical amplifiers, superluminescent light-emitting diodes, optical switches, etc., one of the most important performance indicators is to have a large 3dB gain bandwidth in order to work in a large wavelength range. At present, there are mainly the following methods for fabricating wide-gain-bandwidth semiconductor optoelectronic devices: [0003] 1) The active region is composed of a single quantum well or multiple identical quantum wells: (see Appl.Phys.Lett., Vol.56...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L33/00H01L33/12H01S5/20H01S5/30
Inventor 王书荣王圩朱洪亮张瑞英边静
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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