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Manufacturing method of zinc tungstate humidity sensor

The technology of a humidity sensor and a manufacturing method, which is applied to electric solid devices, electrical components, circuits, etc., can solve the problems of instability, slow response, low sensitivity, etc., and achieve the effects of convenient operation, low cost and high sensitivity

Inactive Publication Date: 2005-01-26
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional humidity sensors have problems such as slow response, low sensitivity, and instability

Method used

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  • Manufacturing method of zinc tungstate humidity sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1: Zinc oxide and tungsten trioxide were mixed at a ratio of 1:0.4, and the mixture was ground in a ball mill for 12 hours to achieve complete uniformity. Then add 2% cetyl alcohol, add a small amount of absolute ethanol, and continue grinding in the mortar for 2 hours. The mixture was pressed into a disc with a diameter of 10 mm and a thickness of 5 mm under a pressure of 100 MPa, and two gold wires were implanted in the disc as electrode leads. The wafer is heat-treated in a tube furnace, first at a heating rate of 10 °C / min to 400 °C, then at a heating rate of 2 °C / min to 700 °C, and finally at a heating rate of 1 °C / min to 800 °C °C and keep for 12 hours. Finally, the main components of the zinc tungstate humidity sensor are obtained.

[0015] Through the test, the attached figure 1 The sensitivity curve in , from which curve 6 can be seen. Its sensitivity R 5％ / R 98％ for 3506. have a higher value.

[0016] In the figure, curve 5 is the pure zinc oxi...

Embodiment 2

[0017] Example 2: Zinc oxide and tungsten trioxide were mixed at a ratio of 1:0.2, and the mixture was ground in a ball mill for 12 hours to achieve complete uniformity. Then add 2% cetyl alcohol, add a small amount of absolute ethanol, and continue grinding in the mortar for 2 hours. The mixture was pressed into a disc with a diameter of 10 mm and a thickness of 5 mm under a pressure of 100 MPa, and two gold wires were implanted in the disc as electrode leads. The wafer is heat-treated in a tube furnace, first at a heating rate of 10 °C / min to 400 °C, then at a heating rate of 2 °C / min to 700 °C, and finally at a heating rate of 1 °C / min to 800 °C °C and keep for 12 hours. Finally, the main components of the zinc tungstate humidity sensor are obtained.

[0018] Through the test, the attached figure 1 The sensitivity curve in , from which curve 4 can be seen. Its sensitivity R 5％ / R 98％ for 341.

[0019] In the figure, curve 5 is the pure zinc oxide curve for comparison...

Embodiment 3

[0020] Embodiment 3: The method of this embodiment is basically the same as that of the above embodiment, except that the mixing ratio of zinc oxide and tungsten trioxide is 1:0.6 in this embodiment. The main components of the obtained zinc tungstate humidity sensor, its sensitivity curve is shown in the curve 3 of the accompanying drawing, and its sensitivity R 5％ / R 98％ for 463.

[0021] Curve 5 is the pure zinc oxide curve for comparison, without sensitivity.

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Abstract

The invention relates to an iron oxide / tin dioxide double-layer film alcohol sensing component manufacturing method, mainly adopting sol-gel process and its characteristic: on an aluminum oxide substrate, firstly dip-coating a tin dioxide layer, then preparing an iron oxide layer on the surface of the tin dioxide layer, and after pretreatment, forming it. It has higher stability and sensitivity and simple process and low cost. It can be widely used in detecting if a driver overdrinks wine, thus able to control the problem of driving after drinking wine.

Description

technical field [0001] The invention relates to a method for manufacturing a zinc tungstate humidity sensor, and belongs to the field of sensor technology or semiconductor sensor manufacturing. Background technique [0002] A semiconductor gas sensor refers to a gas sensor made of semiconductor materials plus electrodes and heating resistors. Due to the change of the ambient gas composition, the electrical properties of the semiconductor gas sensor change, and the type and concentration of the gas present in the environment are detected by measuring the resistance of the semiconductor gas sensor. [0003] As we all know, due to the needs of industrial processes and the requirements of improving people's living standards, more and more occasions need to monitor and control the humidity of the environment. Traditional humidity sensors have problems such as slow response, low sensitivity, and instability. This is related to the main components of the sensing device it uses. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/60H10N99/00
Inventor 焦正吴明红顾建忠李珍王艳丽
Owner SHANGHAI UNIV
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