Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Potentionmetric DNA microarray, Process for producing same and method of analyzig nucleuic acid

一种电位滴定、解析方法的技术，应用在重组DNA技术、核苷酸文库、化学仪器和方法等方向，能够解决检测精度劣化、电极腐蚀、损害电流测定稳定性等问题

Inactive Publication Date: 2005-02-16
HITACHI HIGH-TECH CORP
View PDF0 Cites 80 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the electrode reaction is an irreversible and non-equilibrium reaction, corrosion of the electrode, generation of gas, etc. occur, which impairs the stability of current measurement, and especially in the case of repeated measurement, the detection accuracy deteriorates.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Potentionmetric DNA microarray, Process for producing same and method of analyzig nucleuic acid
  • Potentionmetric DNA microarray, Process for producing same and method of analyzig nucleuic acid
  • Potentionmetric DNA microarray, Process for producing same and method of analyzig nucleuic acid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] figure 1 It is a schematic cross-sectional view illustrating an example of the field effect transistor for gene detection of the present invention.

[0037] It is a structure in which a nucleic acid probe is immobilized on the surface of the gate insulator 2 of the insulated gate electric field effect transistor 1 . Nucleic acid probes use oligonucleotides or cDNA or fragments of DNA branched in the middle, usually consisting of less than or equal to 300 bases, which can hybridize with the target gene that should be determined under appropriate reaction conditions. In the case of nucleotides, nucleic acid fragments less than or equal to 80 bases in length are desired. Gate insulators, either alone or in combination with silicon dioxide (SiO 2 ), silicon nitride (SiN), aluminum oxide (Al 2 o 3 ), tantalum pentoxide (Ta 2 o 5 ) and other materials, usually, in order to keep the transistor working well, in silicon dioxide (SiO 2 ) on which a stack of silicon nitride...

Embodiment 2

[0042] figure 2 is to use figure 1 It is a diagram showing a configuration example of a genetic testing system using an electric field effect transistor (Genetic FET) for genetic testing.

[0043] The genetic screening system, in addition to figure 1 In addition to the shown FET1 for gene detection, a reference FET6 is used to perform differential measurement between the FET for gene detection and the reference FET. A nucleic acid probe 3 having a base sequence complementary to the target gene in the sample is immobilized on the surface of the gate insulator of the FET 1 for gene detection. On the other hand, the nucleic acid probe 7 having a base sequence different from that complementary to the target gene is immobilized on the surface of the gate insulator of the reference FET6.

[0044] By performing such a differential measurement, the change in the output value due to the change in the ambient temperature or light caused by the difference in the electrical characteri...

Embodiment 3

[0047] image 3 It is an explanatory diagram of a measurement system combining the DNA microarray and intercalator of the present invention. In the case of the DNA microarray shown in the figure, three Genetic FETs 12 to 14 are integrated, the first FET 12 is used as a gene detection FET for detecting the first target gene, and the second FET 13 is used as a gene detection FET for detecting the second gene FETs are used, and the third FET14 is used as a reference FET. Nucleic acid probes having base sequences complementary to the first and second genes are respectively immobilized on the gate insulators of the first and second FETs. A nucleic acid probe having a base sequence different from the complementary base sequences of the first and second genes is immobilized on the surface of the insulator of the reference FET.

[0048] image 3 It shows the state when a sample solution containing only the first gene is introduced into the above-mentioned integrated DNA microarray,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A DNA microarray system whereby measurement can be performed at a low running cost, a low price and yet a high accuracy. A nucleic a cid probe 3is immobilized on the surface of a gate insulator of an electric field effect transistor and then hybridized with a target gene on the surface of the insulator. A change in the surface electric charge density thus arising is detected by using the electric effect.

Description

technical field [0001] The present invention relates to the field of biotechnology, such as gene diagnosis, DNA sequence analysis or gene polytype analysis, especially the technology in the field of genetic inspection. More specifically, it relates to potentiometric titration capable of analyzing several different nucleic acids in parallel with high precision A DNA microarray, its production method, and nucleic acid analysis method. Background technique [0002] The genome sequence analysis projects of various organisms represented by the Human Genome Project are progressing rapidly, and a huge amount of base sequence information is accumulated. The entire base sequence of the human genome is being determined. In the future, by clarifying the function of genes in living things, it is estimated that the development of gene-related technologies will advance rapidly in a wide range of fields such as the diagnosis of various diseases, the development of pharmaceuticals, and the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01J19/00B01L3/00C12M1/00C12N15/09C12Q1/68C40B40/06G01N27/414H01L29/06H01L29/66
CPCB01J2219/00722B01J2219/00585B01J2219/00626B01J19/0046B01L3/5085C40B40/06B01J2219/00608B01J2219/00659B01J2219/00621B01J2219/00637G01N27/4145B01J2219/00612C12Q1/6825G01N27/414B01J2219/00653B01J2219/00596B01J2219/00529C12Q1/6837C12Q2565/501C12Q2565/607
Inventor 宫原裕二保田健二服部久美子
Owner HITACHI HIGH-TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com