Preparation method for TiOxNy highly effective solar photo-thermal conversion film
A technology of light-to-heat conversion and solar energy, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of increasing the demand for solar spectrum selective thin-film heat-absorbing plate cores, and the difficulty of vacuum tubes, etc., to achieve the goal of promoting The effect of clean and environmentally friendly production
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0022] Operation steps: 1) Remove the contamination layer and oxide layer on the surface of the copper plate core; 2) Place the copper plate core on the sample holder of the magnetron sputtering machine, with a distance of 5 cm from the target base; 3) Vacuumize and bake to improve the vacuum quality, set Set the baking temperature at 60°C, and the background vacuum reaches 5×10 -3 Pa; 4) Introduce 42 sccm of argon gas through the mass flow meter, and adjust the vacuum degree of the vacuum chamber to 0.5Pa; 5) Turn on the target power supply, sputtering current 5A, and clean the surface of the pre-sputtering Ti target; 6) Rotate the sample holder and pass Oxygen 8sccm, nitrogen 4sccm, sputtering working pressure 0.5Pa, current 5A, sputtering 5min; 7) Oxygen 8sccm, nitrogen 8sccm, sputtering working pressure 0.5Pa, current 5A, sputtering 15min; 8) stop.
[0023] Technical indicators:
[0024] The absorptivity of the film is 0.94, and the infrared emission rate is 0.07.
[002...
Embodiment 2
[0028] Operation steps: 1) Remove the contamination layer and oxide layer on the surface of the copper plate core; 2) Place the copper plate core on the sample holder of the magnetron sputtering machine, with a distance of 5 cm from the target base; 3) Vacuumize and bake to improve the vacuum quality, set The fixed baking temperature is 90°C, and the background vacuum reaches 5×10 -3Pa: 4) Introduce 42 sccm of argon gas through the mass flow meter, and adjust the vacuum degree of the vacuum chamber to 0.5 Pa; 5) Turn on the target power supply, sputtering current 5A, and clean the surface of the pre-sputtering Ti target; 6) Rotate the sample holder and pass Oxygen 10sccm, nitrogen 4sccm, keep sputtering working pressure 0.6Pa, current 5A, sputtering 5min; 7) oxygen 10sccm, nitrogen 12sccm, keep sputtering working pressure 0.6Pa, adjust sputtering current to 5.5A, sputtering 15min; 8) shutdown.
[0029] Technical indicators:
[0030] The absorptivity of the film is 0.92, and ...
Embodiment 3
[0034] Operation steps: 1) Remove the contamination layer and oxide layer on the surface of the copper plate core; 2) Place the copper plate core on the sample holder of the magnetron sputtering machine, with a distance of 7 cm from the target base; 3) Vacuumize and bake to improve the vacuum quality, set The fixed baking temperature is 180°C, and the background vacuum reaches 8×10 -3 Pa; 4) Introduce 42 sccm of argon gas through the mass flow meter, and adjust the vacuum degree of the vacuum chamber to 0.5 Pa; 5) Turn on the target power supply, sputtering current 5A, and clean the surface of the pre-sputtering Ti target; 6) Rotate the sample holder and pass Oxygen 8sccm, nitrogen gradually adjusted 1-8sccm, every 5min the flow rate increases by 1sccm, keep the sputtering working pressure 0.5Pa, current 5A, sputtering 40min; 7) Shut down.
[0035] Technical indicators:
[0036] The absorptivity of the film is 0.92, and the infrared emission rate is 0.15.
[0037] The color ...
PUM
Property | Measurement | Unit |
---|---|---|
emissivity | aaaaa | aaaaa |
emissivity | aaaaa | aaaaa |
emissivity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com