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Ti-alloy nitride selective-absorption film system and preparation method thereof

A nitride and selective technology, applied in the direction of climate sustainability, metal material coating technology, sustainable manufacturing/processing, etc., can solve the problems of very strict equipment sealing requirements, difficult control of process parameters, and environmental pollution, etc., to achieve High photothermal conversion efficiency, improved industrial production efficiency, and simple preparation method

Inactive Publication Date: 2013-11-06
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as an absorbing film, TXT paint has a maximum absorption rate of only 92%, but an emissivity as high as 40%; chrome-plated film systems are rarely used because of their technological process polluting the environment; AlN / Al cannot be used in non-vacuum high-temperature environments. It has been used for a long time and has been eliminated; the preparation process of NiCrNxOy, TiNxOy and other heat absorbing films that are widely used at present needs to consider two reaction gases nitrogen and oxygen at the same time, and the process parameters are difficult to control due to the participation of oxygen, and the sealing of the equipment very strict

Method used

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  • Ti-alloy nitride selective-absorption film system and preparation method thereof
  • Ti-alloy nitride selective-absorption film system and preparation method thereof
  • Ti-alloy nitride selective-absorption film system and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Cu substrate / TiAlN / Si 3 N 4 / SiO 2 Absorbent film system and its preparation method.

[0033] The absorption film system is specifically: Cu foil substrate / Ti 0.38 Al 0.62 N thin film (103nm) / Si 3 N 4 Thin film (27nm) / SiO 2 Thin film (80nm).

[0034] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the specific preparation conditions of each layer of the absorbing film system are as follows:

[0035] (1) First, using Cu foil as the substrate, using TiAlN ceramics sintered according to the preset atomic ratio of Ti, Al, and N as the target, deposit a layer on the Cu film in a pure argon atmosphere. The TiAlN thin film is grown to a thickness of 103nm by controlling the reactive sputtering time. The atomic ratio of the three elements in the target used in this embodiment is Ti:Al:N=0.38:0.62:1.00, the sputtering power is 1kW, the intermediate frequency frequency is 30kHz, and the Ar gas flow rate is 35sccm...

Embodiment 2

[0042] Cu substrate / TiSiN / Si 3 N 4 / SiO 2 Absorbent film system and its preparation method.

[0043] The absorption film system is specifically: Cu foil substrate / Ti 0.4 Si 0.6 N thin film (96nm) / Si 3 N 4 Thin film (30nm) / SiO 2 Thin film (88nm).

[0044] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the specific preparation conditions of each layer of the absorbing film system are as follows:

[0045] (1) First, Cu foil was used as the substrate, TiN ceramic target and Si were used as targets, and co-sputtering was carried out under a mixed atmosphere of nitrogen and argon. The sputtering power used in this embodiment is 1 kW, the intermediate frequency is 30 kHz, the Ar gas flow is 60 sccm, and the N gas flow is 35 sccm. The film thickness was grown to 96nm by controlling the reactive sputtering time.

[0046] (2) At Ti 0.4 Si 0.6 On the N selective absorption film layer, grow Si 3 N 4 Anti-reflection ...

Embodiment 3

[0052] Cu substrate / Ag / TiAlN / AlN / SiO 2 Absorbent film system and its preparation method.

[0053] The absorption film system is specifically: Cu foil substrate / Ag thin film (10nm) / Ti 0.38 Al 0.62 N film (98nm) / AlN film (36nm) / SiO 2 Thin film (54nm).

[0054] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the specific preparation conditions of each layer of the absorbing film system are as follows:

[0055] (1) First, a 10nm infrared highly reflective Ag film was coated on the Cu foil substrate with metal Ag as the target;

[0056] (2) On the Ag film, use the TiAlN ceramics sintered according to the preset atomic ratio of Ti, Al, and N as the target material, deposit a layer of TiAlN film in a pure argon atmosphere, and control the reactive sputtering time to grow the film thickness to 98nm. The atomic ratio of the three elements in the target used in this embodiment is Ti:Al:N=0.38:0.62:1.00, the sputtering powe...

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Abstract

The invention discloses a Ti-alloy nitride selective-absorption film system. The selective-absorption film system comprises a metal substrate and further comprises a Ti-alloy nitride selective-absorption film, an anti-reflection dielectric film and an SiO2 protective film which are deposited on the metal substrate in sequence. The selective-absorption film system provided by the invention is characterized in that the solar absorptivity is greater than 97%; the solar emissivity is smaller than 3%; both the photo-thermal conversion efficiency and the heat-collecting efficiency are high. Under the premise of keeping high absorptivity and low emissivity, the selective-absorption film can meet the requirements of diversification and individuation of photo-thermal products such as solar water heaters and solar air conditioners by adjusting the components of Ti alloy. The selective-absorption film system is simple in structure and free from oxygen deposition, and has the characteristics of simple preparation technology and using less target materials, so that the production efficiency is greatly improved; the industrial large-scale production cost is lowered. Therefore, the selective-absorption film system is of great significance for the development of the field of solar selective heat absorption films.

Description

technical field [0001] The invention relates to the design of a selective heat-absorbing film system for a solar heat collector, in particular to a high-absorption and low-radiation selective absorption film system based on Ti alloy nitride, which can greatly improve the efficiency of a coating process. technical background [0002] Solar thermal conversion is a solar energy utilization method with high energy conversion efficiency and utilization rate and low cost, which can be widely promoted in the whole society. At present, solar thermal utilization is the most active and has formed an industry. Due to the characteristics of fast photothermal conversion rate, high thermal efficiency, large lighting area, simple structure, reliable operation, reasonable cost, and strong pressure bearing capacity, flat plate collectors have a series of advantages such as perfect integration with buildings, It is developing rapidly in the field of energy utilization. Regardless of the for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F24J2/48C23C14/34C23C14/06B32B9/04
CPCY02E10/40Y02P80/20
Inventor 陆卫王晓芳俞立明王少伟陈飞良刘星星简明陈效双
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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