Magnetoresistance effect element and manufacturing method and apparatus thereof, and magnetic reproducing apparatus

A magnetoresistance and element technology, applied in the field of magnetoresistance effect element manufacturing equipment, can solve problems such as narrowing the track width of difficult magnetic heads, and achieve the effects of narrow track width, increased compatibility, and compatible recording density

Inactive Publication Date: 2005-05-04
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the limit of photolithography technology, it is more difficult to narrow the track width of the magnetic head through the existing technology

Method used

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  • Magnetoresistance effect element and manufacturing method and apparatus thereof, and magnetic reproducing apparatus
  • Magnetoresistance effect element and manufacturing method and apparatus thereof, and magnetic reproducing apparatus
  • Magnetoresistance effect element and manufacturing method and apparatus thereof, and magnetic reproducing apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0036] figure 1 is a cross-sectional view schematically showing the first embodiment of the magnetoresistance effect element according to the present invention.

[0037] exist figure 1 In , the air bearing surface (ABS) facing the disk media (not shown) is shown. figure 1 Among them, on a substrate (not shown), a seed layer 2, an antiferromagnetic layer 12, a pinning layer 3, an intermediate layer 6, a free layer 5, a recombination layer 8 and a cap layer 10 are sequentially stacked on another one above. The seed layer 2 and the cap layer 10 are mainly composed of conductive thin films, such as Ta. The antiferromagnetic layer 12 is mainly composed of a metallic magnetic material, mainly PtMn. The pinned layer 3 is mainly composed of stacked magnetic films such as CoFe / Ru / CoFe. The intermediate layer 6 is mainly composed of conductive thin films such as Cu, Au, Ag, Pt, Pd, Ir or Os. The free layer 5 is mainly composed of a metal magnetic material mainly CoFe / NiFe.

[003...

no. 2 approach

[0049] Figure 5 is a cross-sectional view schematically showing a second embodiment of the magnetoresistance effect element according to the present invention. exist Figure 5 in, with figure 1 The same parts in are denoted by the same reference numerals. Only parts different from the latter will be described.

[0050] exist Figure 5 Among them, the intermediate layer 6 formed between the pinned layer 3 and the free layer 5 includes a current control region 8a and an insulating material region 8b. That is, in the second embodiment, the current control region 8a and the insulating material region 8b are in figure 1 Formed in the intermediate layer 6, so that the intermediate layer 6 also plays the role of composite layer 8.

[0051] Figure 6 is a conceptual representation that includes Figure 5 A cross-sectional view of the structure of the main part of the magnetic head of the magnetoresistance effect element. as in figure 2 in Figure 6 In this case, bias film...

no. 3 approach

[0055] Next, a method of manufacturing a magnetoresistance effect element according to a third embodiment of the present invention will be explained. The magnetoresistance effect element related to the present invention is manufactured using an apparatus combining a vacuum vapor deposition unit for forming a metal thin film and an ion irradiation unit for irradiating ion beams on the metal thin film. The vacuum vapor deposition unit has the function of processing samples in an oxygen atmosphere. That is to say, a film-forming unit is used in combination, a unit having the function of oxidizing a sample under proper temperature control using an appropriate oxygen partial pressure and an appropriate exposure time, and an ion radiation unit are used to realize the manufacturing equipment of the magnetoresistance effect element of the present invention .

[0056] Figure 9 is to help explain Figure 5 A cross-sectional view of the first step in the manufacturing method of the m...

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Abstract

A CPP (Current Perpendicular-to-the-Plane) magnetoresistance effect element which causes sensing current to flow perpendicularly to the stacked faces of a plurality of conductive layers, the CPP magnetoresistance effect element comprises a composite layer in which a plurality of regions differing from one another are formed in a common layer in a mixed manner and which includes a current control region which is formed narrower than the stacked area of the composite layer and controls the flow rate of the sensing current, and an insulating material region which cuts off the flow of the sensing current.

Description

technical field [0001] The present invention relates to a CPP (current perpendicular to plane) magnetoresistance effect element that causes a detection current to flow perpendicular to the direction in which a plurality of conductive layers are stacked, a manufacturing method of a CPP magnetoresistance effect element, a magnetic head with a magnetoresistance effect element, a magnetic head suspension assembly, Manufacturing equipment for magnetic reproduction equipment and magnetoresistance effect elements. Background technique [0002] In recent years, the size of magnetic recording apparatuses, including hard disk units, has been rapidly reduced, and thus the recording density has been remarkably increased. This trend is expected to become stronger in the future. As the recording density becomes higher, highly sensitive detectors are required. To meet the demand, current perpendicular to plane giant magnetoresistance (CPP-GMR) elements have been developed. In this eleme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/127G11B5/39G11B5/48H01L21/8246H01L27/105H01L43/08H01L43/10H01L43/12
CPCG11B5/4833G11B5/3903G11B5/4826
Inventor 船山知己
Owner KK TOSHIBA
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