Method for making high-voltage high-power low differential pressure linear integrated regulated power supply circuit

A regulated power supply circuit, low dropout linear technology, applied in circuits, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as reducing chip area, and achieve the effect of reducing chip area and improving chip yield

Inactive Publication Date: 2005-09-21
NO 24 RES INST OF CETC
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  • Abstract
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  • Claims
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a manufacturing method of a high-voltage, high-power, low-dropout linear integrated

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  • Method for making high-voltage high-power low differential pressure linear integrated regulated power supply circuit
  • Method for making high-voltage high-power low differential pressure linear integrated regulated power supply circuit
  • Method for making high-voltage high-power low differential pressure linear integrated regulated power supply circuit

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Embodiment Construction

[0045] Specific embodiments of the present invention are not limited to the following description. The present invention will be further described now in conjunction with accompanying drawing.

[0046] The steps of the method of the present invention are as follows: firstly, the required SOI material sheet is obtained by using silicon / silicon bonding and thinning and polishing technology; An NPN compatible bipolar process is used to manufacture the high-voltage, high-power, low-dropout linear integrated regulated power supply circuit.

[0047] 1. The steps to obtain the required SOI material sheet by using silicon / silicon bonding and thinning and polishing technology are:

[0048] Use 1# liquid NH with P-type (100) crystal orientation and silicon wafer 2 with a resistivity of 7-13Ω.cm 4 OH:H 2 o 2 :H 2 O=1:2:7, 2# liquid HCl: H 2 o 2 :H 2 O=1:2:7, each cleaning for 10 minutes, collectively called RCA cleaning; oxidation, the thickness is 600±50nm, forming a strip of Si...

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Abstract

This invention refers to a method for making the circuit of high voltage high power low voltage difference linear integrated stabilized voltage supply, which contains obtaining SOI chip by silicon/silicon bonding and thickness-reducing polishing technology, deep groove etching on SOI, polysilicon back filling dielectric isolation and longitudinal PNP and longitudinal NPN compatible bipolar technology. Said method reduces the device isolated distance and chip area and raises chip yield.

Description

(1) Technical field [0001] The invention relates to a manufacturing method of an integrated voltage-stabilizing power circuit, in particular to a manufacturing method of a high-voltage, high-power, low-dropout linear integrated voltage-stabilizing power circuit. It is used in the manufacture of high-voltage, high-power, low-dropout linear integrated regulated power supply circuit chips. (2) Background technology [0002] At present, the manufacturing of the high-voltage, high-power, low-dropout linear integrated regulated power supply circuit mainly adopts three kinds of CMOS technology, bipolar technology compatible with horizontal PNP and vertical NPN, and bipolar technology compatible with vertical PNP and vertical NPN. The CMOS process is mainly used to manufacture low-dropout power supply circuits with low operating voltage (about 5V) and output current less than 300 mA; the bipolar process compatible with horizontal PNP and vertical NPN is mainly used for manufacturing...

Claims

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Application Information

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IPC IPC(8): H01L21/822H01L27/04
Inventor 徐世六张正元刘玉奎胡永贵税国华
Owner NO 24 RES INST OF CETC
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