Method for preparing chalkogenide thermoelectric film using liquid-phase chemical method

A chalcogenide, thermoelectric thin film technology, applied in liquid chemical plating, thermoelectric device manufacturing/processing, thermoelectric devices, etc., can solve the problems of high cost, large investment, difficult batch preparation, etc. The effect of high transduction speed

Inactive Publication Date: 2005-10-05
SHANDONG UNIV
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  • Abstract
  • Description
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Problems solved by technology

The above preparation methods are also in the preliminary experimental stage. Since most of these methods belong to physical preparation methods, the investment is large, the c

Method used

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  • Method for preparing chalkogenide thermoelectric film using liquid-phase chemical method
  • Method for preparing chalkogenide thermoelectric film using liquid-phase chemical method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1. Solution preparation:

[0025] (1) 0.05mol / L H 2 SeO 3 Solution preparation: 0.005mol of SeO 2 (1.205g) was dissolved in water to a constant volume of 100ml solution to make a concentration of 0.05mol / L H 2 SeO 3 solution.

[0026] (2) 0.05mol / L BiCl 3 Solution preparation 0.0025mol BiCl 3 (0.788g) was dissolved in water and added 2ml hydrochloric acid to dilute to 50ml solution to make BiCl with a concentration of 0.05mol / L 3 solution.

[0027] (3) Preparation of Bi+Se mixed solution: take 12ml of 0.05mol / L H 2 SeO 3 solution and 8ml of 0.05mol / L BiCl 3 solution, mixed, and stirred for 30 minutes to prepare a Bi 2 Se 3 0.1mol / L Bi+Se precursor mixed solution with molecular formula ratio; set aside.

[0028] 2. Bi 2 Se 3 Film preparation:

[0029] (1) Spin coating: operate according to the general film spin method. The quartz glass substrate is boiled with sulfuric acid + hydrogen peroxide, deionized water, ethanol, acetone, etc., and cleaned under u...

Embodiment 2

[0035] 1. Solution preparation:

[0036] (1) 0.2mol / L H 2 SeO 3 Solution preparation: 0.02mol of SeO 2 (4.82g) was dissolved in water to a constant volume of 100ml solution to make a concentration of 0.2mol / L H 2 SeO 3 solution.

[0037] (2) 0.2mol / L BiCl 3 Solution preparation: 0.01mol BiCl 3 (3.53g) was dissolved in water and added 2ml hydrochloric acid to dilute to 50ml solution to make BiCl with a concentration of 0.2mol / L 3 solution.

[0038] (3) Preparation of Bi+Se mixed solution: take 12ml of 0.2mol / L H 2 SeO 3 solution and 8ml of 0.2mol / L BiCl 3 solution, mixed, and stirred for 30 minutes to prepare a Bi 2 Se 3 0.4mol / L Bi+Se precursor mixed solution with molecular formula ratio. spare.

[0039] 2. Bi 2 Se 3 Film preparation:

[0040] Other steps are with example 1.

Embodiment 3

[0042] 1. Solution preparation:

[0043] (1) 0.5mol / L H 2 SeO 3 Solution preparation: 0.05mol of SeO 2 (12.05g) was dissolved in water to a constant volume of 100ml solution to make a concentration of 0.5mol / L H 2 SeO 3 solution.

[0044] (2) 0.5mol / L BiCl 3 Solution preparation 0.025mol BiCl 3 (7.88g) was dissolved in water and added 2ml hydrochloric acid to dilute to 50ml solution to make BiCl with a concentration of 0.5mol / L 3 solution.

[0045] (3) Preparation of Bi+Se mixed solution: take 12ml of 0.5mol / L H 2 SeO 3 solution and 8ml of 0.5mol / L BiCl 3 solution, mixed, and stirred for 30 minutes to prepare a Bi 2 Se 3 1mol / L Bi+Se precursor mixed solution with molecular formula ratio. spare.

[0046] 2. Bi 2 Se 3 Film preparation:

[0047] Other steps are with example 1.

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Abstract

Predecessor solution is prepared from material of salts of Bi, Sb, Sn or Ph and mineral of Se and Te. Film of predecessor is made through throwing method. Coreduction method deoxidizes dried film of predecessor and then through heat treatment obtains composite dopes thermoelectric film of sulfur family compound. Second layer of film of sulfur family compound in different ingredients is prepared on film of polycrystal sulfur family compound in the method. Thermoelectric superlattice of sulfur family compound in high thermoelectric performance is fabricated by alternating two kinds of films. Subminiature integrated thermoelectric parts can be realized through thermoelectric films prepared by using chemical process, and technique of printing integrated circuit. The invention promotes development in areas of refrigeration, microelectronic, photoelectronic, laser and superconduct etc.

Description

(1) Technical field [0001] The invention relates to a method for preparing a thermoelectric thin film, in particular to a method for preparing a chalcogenide thermoelectric thin film by using a liquid phase chemical method. (2) Background technology [0002] Thermoelectric superlattice structures have excellent thermoelectric properties due to their complex density of states distribution, energy discontinuity distribution caused by quantum confinement effects, unique carrier scattering mechanism, and very low phonon thermal conductivity. In recent years, theory and experiments have shown that thermoelectric nanostructures, including thermoelectric superlattices, quantum wires, and quantum dots, possess much greater thermoelectric properties than bulk materials. In recent years, a number of articles on thermoelectric superlattice multilayer thin films have been published in Nature and Science, and it is found that their thermoelectric properties and cooling efficiency are gre...

Claims

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Application Information

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IPC IPC(8): C23C18/00H01L35/34H01L37/00
Inventor 刘宏王继扬韩峰崔洪梅李霞林延霆蒋民华
Owner SHANDONG UNIV
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