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Method for preparing nano-silicone base lighting composite film

A composite film and nano-silicon technology, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as high-temperature annealing, unfavorable semiconductor process compatibility, etc.

Inactive Publication Date: 2005-10-26
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods have the characteristics of growing under high temperature conditions or requiring high temperature annealing, which are not conducive to compatibility with current semiconductor processes

Method used

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  • Method for preparing nano-silicone base lighting composite film
  • Method for preparing nano-silicone base lighting composite film
  • Method for preparing nano-silicone base lighting composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Example 1 Preparation of Nano Si-in-SiN x (x=1.0) Luminescent Composite Film

[0022] 1. Sonicate the monocrystalline silicon wafer with acetone, alcohol, and deionized in turn for 10 minutes; boil the monocrystalline silicon wafer with deionized water for 2 minutes under boiling conditions; dry the residual water on the monocrystalline silicon wafer, and then Use a mask to fix the monocrystalline silicon wafer into the groove on the lower surface of the upper plate of the capacitor plate to ensure that the monocrystalline silicon wafer is not loose; put the capacitor plate into capacitively coupled plasma enhanced chemical vapor deposition (PECVD) ) in the vacuum chamber of the system;

[0023] 2. Ground the upper plate of the capacitor plate, and use high-purity silane (SiH) with a purity of 99.99% 4 ), high-purity hydrogen (H 2 ) and high-purity nitrogen (N 2 ) is fully mixed in the mixing chamber, the gas outlet of the mixing chamber is closely connected with th...

Embodiment 2

[0025] Example 2 Preparation of Nano Si-in-SiO x (x=1.78) Luminescent Composite Film

[0026] 1. Sonicate the monocrystalline silicon wafer with acetone, alcohol, and deionized in turn for 10 minutes, boil the monocrystalline silicon wafer with deionized water for 20 minutes under boiling conditions; dry the residual water on the monocrystalline silicon wafer, and then Use a mask to fix the monocrystalline silicon wafer into the groove on the lower surface of the upper plate of the capacitor plate to ensure that the single crystal silicon wafer does not loosen; the capacitor plate is located in a capacitively coupled plasma enhanced chemical vapor deposition (PECVD) system in the vacuum chamber;

[0027] 2. Ground the upper plate of the capacitor plate, and use high-purity silane (SiH) with a purity of 99.99% 4 ), high-purity hydrogen (H 2 ) and high-purity nitrous oxide (N 2 O) fully mix in the mixing chamber, the gas outlet of the mixing chamber is closely connected with...

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Abstract

This invention discloses a method for preparing nm silicon base light emitting compound film, which utilizes capacitance coupled plasma to strengthen the chemical gas phase deposition system, the lower pole plate of the pole plate is a double-layer screen inlet structure, the gap between the two pole plates is 2.0-2.5cm, radio signals are added to the lower plate, the upper pole plate is connected to the earth, selects 99.99% mixed gas of pure silane, N and H as the predecessor material, the base plate, monocrystal silicon chip is placed on the upper pole plate to ensure film preparation when inputting small power(35w) RF, the temperature of the chip is kept below 50deg.C silicon particle is easier to live in the compound film generated on the low temperature chip.

Description

technical field [0001] The invention relates to a method for preparing a nano-silicon-based light-emitting composite film. Background technique [0002] The exploration and preparation of silicon-based high-efficiency light-emitting thin films has been a research hotspot in the past ten years and even in the next few years. Silicon-based materials with high-efficiency tunable visible light and full-band light emission can be applied to technical fields such as optical interconnection, optical communication, and all-silicon flat display. . However, due to structural and chemical instability and poor compatibility with the current semiconductor process, silicon-based luminescent materials still have a certain distance from actual production and application. [0003] The methods currently used in the world to prepare silicon-based luminescent films are: PECVD (plasma enhanced chemical vapor deposition), hot filament CVD (hot filament assisted chemical vapor deposition), atmosp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L33/00
Inventor 曹则贤王永谦马利波宋蕊
Owner INST OF PHYSICS - CHINESE ACAD OF SCI