Vertical structure semiconductor chip or device growthing on silicone substrate

A vertical structure and growth substrate technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problem of epitaxial layer growth rate and composition ratio changes, epitaxial layer uneven electrical/optical characteristics, and silicon wafer surface temperature unevenness and other issues, to achieve the effect of improving light extraction efficiency, uniform current distribution, and strong antistatic ability
CN1688030AInactive Publication Date: 2005-10-26ι‡‘θŠƒ
0 Cites 18 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
ι‡‘θŠƒ
Publication Date
2005-10-26
Estimated Expiration
Not applicable Β· inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

This invention discloses a vertical semiconductor chip (including LEDS of GaN base and Galn PN BASE) and its batch production method including the following steps: laminating an intermediate medium layer on a silicon grow substrate, laminating a first kind limit layer on the medium layer, laminating a light emitting layer and a second kind limit layer on the first limit layer, laminating reflection / ohm layer on the second kind limit layer, laminating a conduction layer supporting the substrate on the reflection / ohm layer, stripping the grown substrate and the intermediate layer to expose the first limit layer, laminating a current diffusion layer on the first kind limit layer, laminating a first electrode with optimized patterns on the current diffusion layer.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention discloses a high-quality vertical structure gallium nitride-based semiconductor light-emitting diode grown on a large-diameter silicon substrate and the technology and process of growing it on a silicon wafer, belonging to the field of semiconductor electronics technology. Background technique

[0002] High-power semiconductor light-emitting diodes have great prospects to replace incandescent lamps, but first, technical problems must be solved. The main problems include low light extraction efficiency, low heat dissipation efficiency, and high production costs.

[0003] In order to solve the heat dissipation problem of high-power GaN-based semiconductor light-emitting diodes with a lateral structure, flip-chip bonding technology was proposed. However, the flip-chip technology is complex in process and high in cost. Therefore, a large amount of research has been devoted to a gallium nitride-based semiconductor light-emitting diode with a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More