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Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)

A phosphorus ion, silicon carbide technology, applied in chemical instruments and methods, circuits, electrical components, etc., can solve problems such as difficulty in process realization

Inactive Publication Date: 2006-01-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

High-temperature implantation puts forward higher requirements on the mask, and the annealing temperature of 1700 ° C is more difficult to realize in terms of process to prevent the evaporation of the surface layer of 4H-SiC

Method used

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  • Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)
  • Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)
  • Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)

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Embodiment

[0032] 1. Use the simulation program to select the injection parameters to ensure that the injected phosphorus impurities are evenly distributed in the injection layer. The total implantation dose of phosphorus ions is 2.0×10 15P + cm -2 , perform multiple implants, the energies are: 450, 280, 140, 50keV, and the corresponding dose ratios are: 0.38, 0.26, 0.2, 0.16( figure 1 ).

[0033] 2. Phosphorus ions are implanted into the 4H-SiC (0001) crystal plane. Phosphorus ion implantation rate is controlled at 1.0×10 12 P + cm -2 the s -1 . The injection temperature was room temperature. The implantation angle deviated from the [0001] direction by 7 degrees to avoid the channeling effect of implanted ions.

[0034] 3. The injected sample was annealed at 1500°C for 15 minutes. The annealing is completed under the protection of pure argon, the pressure of argon is 1 standard atmosphere, and the flow rate is 3000 sccm. In order to avoid the preferential evaporation of sili...

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Abstract

The method of reducing 4H-silicon carbide resistivity with phosphorus ion implantation in (0001) orientation includes the following steps: selecting phosphorus ion implantation parameter on 4H-silicon carbide by means of simulation program to form the homogeneous distribution of impurity in the implanted layer; implanting phosphorus ion to the (0001) crystal face of 4H-silicon carbide; and high temperature annealing of the implanted sample under the protection of pure argon. The present invention has controlled phosphorus ion implanting rate, reduced implantation damage, improved crystallization quality of annealed implanted layer, lowered resistivity of the implanted layer and flat and smooth sample surface without obvious surface Si evaporation.

Description

technical field [0001] The invention relates to a method for reducing the resistivity of 4H-SiC (silicon carbide) implanted with phosphorus ions into (0001) orientation, more specifically to a process of multiple implantation of phosphorus ions into (0001)-oriented 4H-SiC, A method of using a lower phosphorus ion implantation rate and then annealing the implanted sample at high temperature to obtain low resistivity. It belongs to the field of semiconductor technology. Background technique [0002] As a representative of the third-generation semiconductor material, silicon carbide is especially suitable for the production of high-temperature, high-power and high-frequency electronic devices because of its wide band gap, high breakdown electric field, high thermal conductivity and high saturated electron drift velocity characteristics. It has received more and more attention and research. Selective doping is an essential technology for fabricating semiconductor planar device...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/425C30B31/22
Inventor 高欣孙国胜李晋闽王雷赵万顺
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI