Cooled deposition baffle in high density plasma semiconductor processing

A plasma and baffle technology, used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of destroying devices, increasing pollutants, etc., to reduce pollution, uniform heat flux, and uniform temperature Effect
CN1723530AInactive Publication Date: 2006-01-18TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2006-01-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

An improved deposition baffle, that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus. The baffle has a central circular part having slots cut therein that are interrupted by electrically conductive bridges. Ribs in the body between the slots have cooling fluid channel sections bored therein, which are joined in series by interconnecting channel portions in a peripheral annular part of the baffle to form a continuous serpentine cooling fluid flow path from an inlet to an outlet in the annular peripheral part of the baffle.
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Description

[0001] This invention is related to U.S. Patent Nos. 6,080,287, 6,197,165, and 6,287,435, and to pending U.S. patent applications Nos. 09 / 629,515 (filed August 1, 2000), ), and No. 10 / 080,496 (filed February 22, 2002), the entire contents of which are hereby incorporated by reference. technical field

[0002] The present invention relates to the use of deposition baffles in plasma processors, and in particular, the present invention relates to the application of high-density plasmas, such as inductively coupled plasma (ICP), in the production of semiconductor devices and integrated circuits to Machines for processing and preparing coatings, especially conductive coatings. The deposition baffle protects dielectric walls and windows of the vacuum processing chamber through which RF energy is coupled into the high density plasma from being coated with deposition material. Background technique

[0003] Inductively coupled plasma (ICP) sources are widely used in the semiconducto...

Claims

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