Apparatus for rotating point cutting large size silicon-carbide crystal

A large-size, silicon carbide technology, applied in the field of rotating point cutting large-size silicon carbide crystal devices, can solve the problems of easy deformation of the basic structure, limited cutting space, low Z-axis speed, etc., to improve the surface quality and solve the problem of precision. , the effect of high basic precision

Inactive Publication Date: 2006-01-25
张革 +1
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. Because the cutting method is surface contact cutting, the SiC surface shape and flatness after cutting are ≥0.70mm, and the parallelism is ≥1.0mm
Unable to adapt to the technical index requirements of cutting (generally, the technical index is that when the diameter of the bar is 50mm and the thickness of the slice is 1mm, the flatness is ≤0.10mm and the parallelism is ≤0.7mm)
[0004] 2. The horizontal cutting method is used, which limits the cutting space and can only cut materials with a diameter of 4 inches
[0005] 3. The saw rope reel is located above the frame body of the equipment, and it is inconv...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus for rotating point cutting large size silicon-carbide crystal
  • Apparatus for rotating point cutting large size silicon-carbide crystal
  • Apparatus for rotating point cutting large size silicon-carbide crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The rotating point cutting device for large-size silicon carbide crystals consists of a base (5), a sensor (10), a diamond saw wire (6), a pneumatic tensioning wheel (2), a working roller (3), a DC servo motor (13), two Dimensional fixture mechanism (9) is formed. The two-dimensional fixture mechanism (9) is composed of a rotating manipulator (11) and a stepping motor (12), the Y-axis moving platform (21) is connected with a horizontal angle adjustment turntable (20), and the horizontal angle adjustment turntable (20) is connected with a The vertical angle adjusts the turntable (22), the stepper motor (12) is connected on the adjustable support plate (19), and is connected with the material clamp (16) through the rotating shaft (18). Clamp cover (8) is arranged on clamp (16), and top wire (15) is housed on clamp cover (8), the center position of adjustment material, the rear portion of clamp is equipped with rolling bearing (17).

[0027] As shown in the figure: the de...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An apparatus for cutting large-size SiC crystal by the moving dots is composed of base, sensor, sawing diamond string, pneumatic tension roller, working rollers, DC servo motor and 2D fixture mechanism consisting of rotary manipulator and step motor. A horizontal angle regulating turn-table is linked on a Y-axis moving platform. A vertical angle regulating turn-table is linked on said horizontal angle regulating one. Said step motor is fixed to an adjustable supporting plate.

Description

technical field [0001] The invention relates to a material processing equipment, in particular to a rotating point cutting large-size silicon carbide crystal device. Background technique [0002] SiC (silicon carbide crystal) is a superhard material with a Mohs hardness of 9.4, and only diamond materials with a Mohs hardness of 10 can be used to cut SiC. The existing traditional diamond saw blade can cut SiC due to the limitation of the diameter of the saw blade, and can only cut the bar with a diameter of less than 25mm, and the cutting kerf is wide due to the thickness of the saw blade, wasting expensive SiC materials. In the past five years, the diamond saw wire cutting equipment has been developed, and the cutting of SiC has been realized. For this reason, I have filed a number of patent applications, such as "desktop large-size precision diamond wire cutting machine (patent application number: 200410050285.6)", "gravity type Outer circle diamond outer circle cutting ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B28D1/22B28D5/00B23H11/00
Inventor 张革李景春
Owner 张革
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap