Tech of sintering Nb2O5-TiO2 system deelectric ceramic

A dielectric ceramic, nb2o5-tio2 technology, applied in the field of dielectric ceramic preparation, can solve the problems of low dielectric coefficient, long holding time, long preparation period, etc. Effect

Inactive Publication Date: 2006-01-25
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The pre-sintering and sintering temperature is too high, the holding time is too long, the dielectric coefficient is relatively low, and only the sintering process with a doping concentration of 5% mol is studied, and there are also long preparation cycles, low efficiency, large energy consumption, and the dielectric coefficient Small size, few options for industrial production, unfavorable for the practical application of industrial production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment one: the Nb 2 o 5 and TiO 2 Powder according to the ratio (Nb 2 o 5 ) 0.95 (TiO 2 ) 0.05 Perform batching, mechanical ball milling for 12 hours, and dry; heat up to 1250°C at a rate of 200°C / hour for pre-burning, and keep warm for 18 hours. Then the pre-burned powder was mechanically ball milled for 12 hours, and dried; in the pre-burned powder, polyvinyl alcohol (PVA) glue mixed with 3% mass concentration was granulated, and the weight of the glue was powder 6% of the total weight; under a pressure of 200MPa, pressed into green sheets; the green body was sintered at a rate of 100°C / hour to 1380°C, kept at a temperature of 2 hours, and then lowered to room temperature at a rate of 150°C / hour. Finally, it is sintered into a dense sheet-like ceramic body; gold electrodes are sprayed on the upper and lower surfaces of the ceramic sheet, and its dielectric properties are measured with a HP4284ALCR precision measuring instrument under conventional measureme...

Embodiment 2

[0020] Embodiment two: the Nb 2 o 5 and TiO 2 Powder according to the ratio (Nb 2 o 5 )0.92 (TiO 2 ) 0.08 for batching, mechanical ball milling for 12 hours, and drying; the temperature was raised to 1250°C for pre-calcination at a rate of 200°C / hour, and the temperature was kept for 18 hours. Then the pre-burned powder was mechanically ball milled for 12 hours, and dried; in the pre-burned powder, polyvinyl alcohol (PVA) glue mixed with 3% mass concentration was granulated, and the weight of the glue was powder 6% of the total weight; under a pressure of 200MPa, pressed into a green sheet; the green body was sintered at a rate of 100 ° C / hour to 1370 ° C, and kept for 15 hours, and then cooled to room temperature at a rate of 150 ° C / hour, Finally, it is sintered into a dense sheet-like ceramic body; gold electrodes are sprayed on the upper and lower surfaces of the ceramic sheet, and its dielectric properties are measured with a HP4284A LCR precision measuring instr...

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PUM

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Abstract

A sintering process for dielectric Nb2O5-TiO2 ceramic includes such steps as proportionally mixing Nb2O5 powder with TiO2 powder, heating at 1250 deg. C for 18 hr, proportionally adding PVC powder, granulating, die pressing, sintering at 1350-1380 deg. C for 2-15 hr and cooling. It has high dielectric coefficient.

Description

technical field [0001] The invention belongs to the field of dielectric ceramic preparation. Background technique [0002] With the development of electronic technology, the size of microelectronic circuits has been made smaller and smaller, so the requirements for the performance of tiny components are also getting higher and higher. For capacitive components, the dielectric properties limit how far they can be minimized. Modern electronic materials will no longer be able to meet the performance requirements of capacitive components in microelectronic circuits. For example: the capacitor dielectric layer in Dynamic Random Access Memory (Dynamic Random Access Memory, referred to as DRAM) is made of SiO 2 or Si 3 N 4 made, their relative permittivity ε under conventional measurement conditions (1MHz frequency and 25°C) r They are 3.8 and 6.0 respectively, which are far from meeting the demands of the current increasing storage capacity. In order to develop and produce D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462C04B35/622C04B35/64
Inventor 王越张秋林蒋毅坚
Owner BEIJING UNIV OF TECH
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